SEMICONDUCTOR MATERIALS

Preparation and thermal-sensitive characteristic of copper doped n-type silicon material

Yanwei Fan1, 2, Bukang Zhou1, 2, Junhua Wang1, Zhaoyang Chen1 and Aimin Chang1,

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 Corresponding author: Aimin Chang, E-mail: Changam@ms.xjb.ac.cn

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Abstract: Copper doped n-type single-crystal silicon materials are prepared by a high temperature diffusion process. The electrical and thermal-sensitive characteristic of materials is investigated under different experimental conditions. The results show that the maximum resistivity of 46.2 Ω ·cm is obtained when the sample is treated at 1200 ℃ for 2 h with the surface concentration of the copper dopant source being 1.83 × 10-7 mol/cm2. The copper doped n-type silicon material presents a negative temperature-sensitive characteristic and the B values are about 3010-4130 K.

Key words: single-crystal silicondeep level impuritycopper



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Fig. 1.  Curve of resistivity at different diffusion temperatures.

Fig. 2.  Curves of resistivity at different copper atom surface concentrations.

Fig. 3.  XRD patterns of copper-rich silicide layer.

Fig. 4.  Curve of sample resistivity at different diffusion times.

Fig. 5.  $R$-$T$ curve of copper doped silicon.

Fig. 6.  ln$R$-1/$T$ curves of copper doped silicon.

Fig. 7.  Energy band configuration of copper doped silicon.

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    Received: 13 April 2014 Revised: Online: Published: 01 January 2015

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      Yanwei Fan, Bukang Zhou, Junhua Wang, Zhaoyang Chen, Aimin Chang. Preparation and thermal-sensitive characteristic of copper doped n-type silicon material[J]. Journal of Semiconductors, 2015, 36(1): 013004. doi: 10.1088/1674-4926/36/1/013004 Y W Fan, B K Zhou, J H Wang, Z Y Chen, A M Chang. Preparation and thermal-sensitive characteristic of copper doped n-type silicon material[J]. J. Semicond., 2015, 36(1): 013004. doi: 10.1088/1674-4926/36/1/013004.Export: BibTex EndNote
      Citation:
      Yanwei Fan, Bukang Zhou, Junhua Wang, Zhaoyang Chen, Aimin Chang. Preparation and thermal-sensitive characteristic of copper doped n-type silicon material[J]. Journal of Semiconductors, 2015, 36(1): 013004. doi: 10.1088/1674-4926/36/1/013004

      Y W Fan, B K Zhou, J H Wang, Z Y Chen, A M Chang. Preparation and thermal-sensitive characteristic of copper doped n-type silicon material[J]. J. Semicond., 2015, 36(1): 013004. doi: 10.1088/1674-4926/36/1/013004.
      Export: BibTex EndNote

      Preparation and thermal-sensitive characteristic of copper doped n-type silicon material

      doi: 10.1088/1674-4926/36/1/013004
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      Project supported by the National High Technology Research and Development Program of China (No. 2012AA091102) and the National Natural Science Foundation of Xinjiang (No. 2010211B24).

      More Information
      • Corresponding author: E-mail: Changam@ms.xjb.ac.cn
      • Received Date: 2014-04-13
      • Accepted Date: 2014-07-20
      • Published Date: 2015-01-25

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