| Citation: |
Mao Ping, Zhang Zhigang, Pan Liyang, Xu Jun, Chen Peiyi. Formation of stacked ruthenium nanocrystals embedded in SiO2 for nonvolatile memory applications[J]. Journal of Semiconductors, 2009, 30(9): 093003. doi: 10.1088/1674-4926/30/9/093003
Mao P, Zhang Z G, Pan L Y, Xu J, Chen P Y. Formation of stacked ruthenium nanocrystals embedded in SiO2 for nonvolatile memory applications[J]. J. Semicond., 2009, 30(9): 093003. doi: 10.1088/1674-4926/30/9/093003.
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Formation of stacked ruthenium nanocrystals embedded in SiO2 for nonvolatile memory applications
doi: 10.1088/1674-4926/30/9/093003
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Abstract
Two methods are proposed to fabricate stacked ruthenium (Ru) nanocrystals (NCs): rapid thermal annealing (RTA) for the whole gate stacks, and RTA before each SiO2 layer deposition. The size and aerial density of Ru NCs are 2–4 nm and 3E12 cm–2 for the former method, compared to 3–7 nm and 2E12 cm–2 for the latter. Because of the higher surface trap density and more uniform electron tunneling path between upper and lower Ru NCs, a 5.2 V memory window and 1 V after a period of 10 years are observed in metal oxide semiconductor (MOS) capacitors fabricated by the former method, which are much better than 4.6 V and no window remaining after one year observed in the latter. The former method is compatible with conventional CMOS technology.-
Keywords:
- ruthenium nanocrystal
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