| Citation: |
Zhou Xiaolong, Sun Niefeng, Yang Ruixia, Zhang Weiyu, Sun Tongnian, Jarasiunas K, Sudzius M, Kadys A. Effect of Deep Traps in Carrier Generation and Transport in Undoped InP Wafers[J]. Journal of Semiconductors, 2007, In Press.
Zhou X L, Sun N F, Yang R X, Zhang W Y, Sun T N, J K, Sudzius M, Kadys A. Effect of Deep Traps in Carrier Generation and Transport in Undoped InP Wafers[J]. Chin. J. Semicond., 2007, 28(S1): 24.
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Effect of Deep Traps in Carrier Generation and Transport in Undoped InP Wafers
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Abstract
Fifty-millimeter undoped indium phosphide(InP)wafers polished on both sides were measured by a psdegenerate four.wave mixing(FWM)technique.Deep defect related carrier generation，recombination，and decay kinetics and exposure characteristics were measured by time-resolved picosecond FWM at 1064nm at room temperature. The diffraction efficiency of an undoped InP sample as a function of energy is shown for two grating periods.Deep donor defects in undoped lnP samples are confirmed by the pronounced effect of space charge electric field on carrier transport.-
Keywords:
- InP
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References
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Proportional views
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