4H-SiC MESFET Device Process

Chen Gang; Bai Song; Zhang Tao; Wang Hao; Li Zheyang; Jiang Youquan

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Article Navigation > Journal of Semiconductors > 2007 > 28(S1): 565-567

Chen Gang, Bai Song, Zhang Tao, Wang Hao, Li Zheyang, Jiang Youquan. 4H-SiC MESFET Device Process[J]. Journal of Semiconductors, 2007, In Press. Chen G, Bai S, Zhang T, Wang H, Li Z Y, Jiang Y Q. 4H-SiC MESFET Device Process[J]. Chin. J. Semicond., 2007, 28(S1): 565.Export: BibTex EndNote

Citation:

Chen Gang, Bai Song, Zhang Tao, Wang Hao, Li Zheyang, Jiang Youquan. 4H-SiC MESFET Device Process[J]. Journal of Semiconductors, 2007, In Press.

Chen G, Bai S, Zhang T, Wang H, Li Z Y, Jiang Y Q. 4H-SiC MESFET Device Process[J]. Chin. J. Semicond., 2007, 28(S1): 565.

Export: BibTex EndNote

Citation:

Chen Gang, Bai Song, Zhang Tao, Wang Hao, Li Zheyang, Jiang Youquan. 4H-SiC MESFET Device Process[J]. Journal of Semiconductors, 2007, In Press.

Chen G, Bai S, Zhang T, Wang H, Li Z Y, Jiang Y Q. 4H-SiC MESFET Device Process[J]. Chin. J. Semicond., 2007, 28(S1): 565.

Export: BibTex EndNote

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4H-SiC MESFET Device Process

State Key Laboratory of Monolithic Integrated Circuits and Modules，Nanjing Electronic Devices Institute，Nanjing 210016，China,State Key Laboratory of Monolithic Integrated Circuits and Modules，Nanjing Electronic Devices Institute，Nanjing 210016，China,State Key Laboratory of Monolithic Integrated Circuits and Modules，Nanjing Electronic Devices Institute，Nanjing 210016，China,State Key Laboratory of Monolithic Integrated Circuits and Modules，Nanjing Electronic Devices Institute，Nanjing 210016，China,State Key Laboratory of Monolithic Integrated Circuits and Modules，Nanjing Electronic Devices Institute，Nanjing 210016，China and State Key Laboratory of Monolithic Integrated Circuits and Modules，Nanjing Electronic Devices Institute，Nanjing 210016，China

Received Date: 2016-05-27
Published Date: 2016-04-28

Abstract

Abstract

We report the key devico process of 4H-SiC MESFET.We fabricate n-channel 4H-SiC MESFETs with lmm total gate periphery with a device process designed by US.The RF characteristics are studied. At，fo=2GHz and Vds=64V，the maximum output power is measured to be 4.1W，and the gain of small signal exceeds 10dB.
- 4H-SiC,
- MESFET,
- microwave,
- wide band semiconductor

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