Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 275-278

Effects of Growth Parameters on Proprties of P-Type ZnO Films Grown by MOCVD

Lu Yangfan, Ye Zhizhen, Zeng Yujia, Xu Weizhong, Zhu Liping and Zhao Binghui

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Abstract: P-type N-ZnO thin films are grown by plasma-assisted metalorganic chemical vapor deposition(MOCVD).Effects of substrate temperature,RF power and flux of DEZn on properties of ZnO films are investigated.

Key words: ZnOp-type dopingmetalorganic chemical vapor deposition

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Lu Yangfan, Ye Zhizhen, Zeng Yujia, Xu Weizhong, Zhu Liping, Zhao Binghui. Effects of Growth Parameters on Proprties of P-Type ZnO Films Grown by MOCVD[J]. Journal of Semiconductors, 2007, In Press. Lu Y F, Ye Z Z, Zeng Y J, Xu W Z, Zhu L P, Zhao B H. Effects of Growth Parameters on Proprties of P-Type ZnO Films Grown by MOCVD[J]. Chin. J. Semicond., 2007, 28(S1): 275.Export: BibTex EndNote
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      Lu Yangfan, Ye Zhizhen, Zeng Yujia, Xu Weizhong, Zhu Liping, Zhao Binghui. Effects of Growth Parameters on Proprties of P-Type ZnO Films Grown by MOCVD[J]. Journal of Semiconductors, 2007, In Press.

      Lu Y F, Ye Z Z, Zeng Y J, Xu W Z, Zhu L P, Zhao B H. Effects of Growth Parameters on Proprties of P-Type ZnO Films Grown by MOCVD[J]. Chin. J. Semicond., 2007, 28(S1): 275.
      Export: BibTex EndNote

      Effects of Growth Parameters on Proprties of P-Type ZnO Films Grown by MOCVD

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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