Abstract: This paper reports the intrinsic-structure DC characteristics computed from the analytical electrochemical current theory of the bipolar field-effect transistor (BiFET) with two identical MOS gates on nanometer-thick pure-base of silicon with no generation-recombination-trapping.Numerical solutions are rapidly obtained for the three potential variables,electrostatic and electron and hole electrochemical potentials,to give the electron and hole surface and volume channel currents,using our cross-link two-route or zig-zag one-route recursive iteration algorithms. Boundary conditions on the three potentials dominantly affect the intrinsic-structure DC characteristics,illustrated by examples covering 20-decades of current (10E-22 to 10E-2 A/Square at 400cm2/ (V·s) mobility for 1.5nm gate-oxide,and 30nm-thick pure-base). Aside from the domination of carrier space-charge-limited drift current in the strong surface channels,observed in the theory is also the classical drift current saturation due to physical pinch-off of an impure-base volume channel depicted by the 1952 Shockley junction-gate field-effect transistor theory,and its extension to complete cut-off of the pure-base volume channel,due to vanishing carrier screening by the few electron and hole carriers in the pure-base,with Debye length (25mm) much larger than device dimension (25nm).

Key words: bipolar field-effect transistor theory, recursive iteration, electron and hole electrochemical potentials, electric potential, boundary conditions