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Energy capability enhancement for isolated extended drain NMOS transistors

Nie Weidong, Wu Jin, Ma Xiaohui and Yu Zongguang

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Abstract: Isolated extended drain NMOS (EDNMOS) transistors are widely used in power signal processing. The hole current induced by a high electric field can result in a serious reliability problem due to a parasitic NPN effect. By optimizing p-type epitaxial (p-epi) thickness, n-type buried layer (BLN) and nwell doping distribution, the peak electric field is decreased by 30% and the peak hole current is decreased by 60%, which obviously suppress the parasitic NPN effect. Measured I-V characteristics and transmission line pulsing (TLP) results show that the on-state breakdown voltage is increased from 28 to 37 V when 6 V VMgs is applied and the energy capability is improved by about 30%, while the on-state resistance remains unchanged.

Key words: energy capability

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    Received: 20 August 2015 Revised: 28 September 2011 Online: Published: 01 February 2012

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      Nie Weidong, Wu Jin, Ma Xiaohui, Yu Zongguang. Energy capability enhancement for isolated extended drain NMOS transistors[J]. Journal of Semiconductors, 2012, 33(2): 024004. doi: 10.1088/1674-4926/33/2/024004 Nie W D, Wu J, Ma X H, Yu Z G. Energy capability enhancement for isolated extended drain NMOS transistors[J]. J. Semicond., 2012, 33(2): 024004. doi: 10.1088/1674-4926/33/2/024004.Export: BibTex EndNote
      Citation:
      Nie Weidong, Wu Jin, Ma Xiaohui, Yu Zongguang. Energy capability enhancement for isolated extended drain NMOS transistors[J]. Journal of Semiconductors, 2012, 33(2): 024004. doi: 10.1088/1674-4926/33/2/024004

      Nie W D, Wu J, Ma X H, Yu Z G. Energy capability enhancement for isolated extended drain NMOS transistors[J]. J. Semicond., 2012, 33(2): 024004. doi: 10.1088/1674-4926/33/2/024004.
      Export: BibTex EndNote

      Energy capability enhancement for isolated extended drain NMOS transistors

      doi: 10.1088/1674-4926/33/2/024004
      • Received Date: 2015-08-20
      • Accepted Date: 2011-07-14
      • Revised Date: 2011-09-28
      • Published Date: 2012-01-20

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