J. Semicond. > 2010, Volume 31 > Issue 2 > 024003, doi: 10.1088/1674-4926/31/2/024003
|

SEMICONDUCTOR DEVICES

Trench gate IGBT structure with floating P region

Qian Mengliang, Li Zehong, Zhang Bo and Li Zhaoji

+ Author Affiliations

PDF

Abstract: A new trench gate IGBT structure with a floating P region is proposed, which introduces a floating P region into the trench accumulation layer controlled IGBT (TAC-IGBT). The new structure maintains a low on-state voltage drop and large forward biased safe operating area (FBSOA) of the TAC-IGBT structure while reduces the leakage current and improves the breakdown voltage. In addition, it enlarges the short circuit safe operating area (SCSOA) of the TAC-IGBT, and is simple in fabrication and design. Simulation results indicate that, for IGBT structures with a breakdown voltage of 1200 V, the leakage current of the new trench gate IGBT structure is one order of magnitude lower than the TAC-IGBT structure and the breakdown voltage is 150 V higher than the TAC-IGBT.

Key words: TAC-IGBT

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 4534 Times PDF downloads: 2857 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 27 September 2009 Online: Published: 01 February 2010

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2010  >  31(2): 024003
      Qian Mengliang, Li Zehong, Zhang Bo, Li Zhaoji. Trench gate IGBT structure with floating P region[J]. Journal of Semiconductors, 2010, 31(2): 024003. doi: 10.1088/1674-4926/31/2/024003 Qian M L, Li Z H, Zhang B, Li Z J. Trench gate IGBT structure with floating P region[J]. J. Semicond., 2010, 31(2): 024003. doi: 10.1088/1674-4926/31/2/024003.Export: BibTex EndNote
      Citation:
      Qian Mengliang, Li Zehong, Zhang Bo, Li Zhaoji. Trench gate IGBT structure with floating P region[J]. Journal of Semiconductors, 2010, 31(2): 024003. doi: 10.1088/1674-4926/31/2/024003

      Qian M L, Li Z H, Zhang B, Li Z J. Trench gate IGBT structure with floating P region[J]. J. Semicond., 2010, 31(2): 024003. doi: 10.1088/1674-4926/31/2/024003.
      Export: BibTex EndNote
      shu

      Trench gate IGBT structure with floating P region

      doi: 10.1088/1674-4926/31/2/024003

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • Received Date: 2015-08-18
      • Accepted Date: 2009-08-02
      • Revised Date: 2009-09-27
      • Published Date: 2010-01-27

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return