| Citation: |
Wang Yangang, Xu Mingzhen, Tan Changhua, Duan Xiaorong. Current Simulation Based on the Percolation-Like Conductionin Ultra-Thin Gate Oxides After Soft Breakdown[J]. Journal of Semiconductors, 2006, In Press.
Wang Y G, Xu M Z, Tan C H, Duan X R. Current Simulation Based on the Percolation-Like Conductionin Ultra-Thin Gate Oxides After Soft Breakdown[J]. Chin. J. Semicond., 2006, 27(4): 735.
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Current Simulation Based on the Percolation-Like Conductionin Ultra-Thin Gate Oxides After Soft Breakdown
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Abstract
The characteristics of the gate current (Ig) and substrate current (Ib) of ultra-thin gate oxides (≤3nm) after soft breakdown (SBD) are studied.An analytic formula for Ig and Ib after SBD--the percolation-like conduction (PLC) formula, based on the percolation-like mechanism, is proposed.The post SBD current-voltage relationship of Ig and Ib in a larger voltage range (-4～+3V) is simulated with the PLC formula,which is simple for the study of ultra-thin gate oxide reliability. -
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