Chin. J. Semicond. > 2005, Volume 26 > Issue 1 > 192-196

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Abstract: 针对常压和真空两种环境,通过三维有限元模拟分析了背面体硅加工型、正面体硅加工型和表面加工型三种微热板(MHP)的传热主渠道和加热功率.制作了背面体硅加工型和表面加工型MHP,并对两者在常压及13.3Pa气压下的加热功率进行了测试.实验值与有限元分析结果一致,表明虽然真空中表面加工型MHP热功耗小于背面体硅加工型MHP,但薄层空气导热使表面加工型MHP在大气中的功耗大幅增加,并大于背面体硅加工型MHP的热功耗.

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2005

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      基于硅微加工工艺的微热板传热分析[J]. Journal of Semiconductors, 2005, In Press. 基于硅微加工工艺的微热板传热分析[J]. Chin. J. Semicond., 2005, 26(1): 192.Export: BibTex EndNote
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      基于硅微加工工艺的微热板传热分析[J]. Journal of Semiconductors, 2005, In Press.

      基于硅微加工工艺的微热板传热分析[J]. Chin. J. Semicond., 2005, 26(1): 192.
      Export: BibTex EndNote

      基于硅微加工工艺的微热板传热分析

      • Received Date: 2015-08-19

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