| Citation: |
Wang Jianhui, Wang Xinhua, Pang Lei, Chen Xiaojuan, Jin Zhi, Liu Xinyu. Effect of varying layouts on the gate temperature for multi-finger AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2012, 33(9): 094004. doi: 10.1088/1674-4926/33/9/094004
Wang J H, Wang X H, Pang L, Chen X J, Jin Z, Liu X Y. Effect of varying layouts on the gate temperature for multi-finger AlGaN/GaN HEMTs[J]. J. Semicond., 2012, 33(9): 094004. doi: 10.1088/1674-4926/33/9/094004.
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Effect of varying layouts on the gate temperature for multi-finger AlGaN/GaN HEMTs
doi: 10.1088/1674-4926/33/9/094004
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Abstract
The impacts of varying layout geometries on the channel temperature of multi-finger AlGaN/GaN HEMTs are investigated by three-dimensional (3-D) thermal simulations. Micro-Raman thermography is selected to obtain a detailed and accurate temperature distribution of the sample for the verification of the 3-D thermal models. Thermal boundary resistance (TBR) plays an important role in the temperature distribution and is taken into account in the thermal model in order to improve the accuracy of the simulated results. The influence from the number of fingers, finger width and gate pitch on the gate temperature are systematically analysed using 3-D thermal simulations with validated model parameters. Furthermore, a robust method that could efficiently reduce the thermal crosstalk of multi-finger AlGaN/GaN HEMTs is proposed to optimize the thermal design of the device. -
References
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