3D Simulation of Mutil-Gate MOSFET with Sub-100nm

Xia Zhiliang; Liu Xiaoyan; Liu Enfeng; Han Ruqi

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Article Navigation > Journal of Semiconductors > 2003 > 24(S1): 140-143

Xia Zhiliang, Liu Xiaoyan, Liu Enfeng, Han Ruqi. 3D Simulation of Mutil-Gate MOSFET with Sub-100nm[J]. Journal of Semiconductors, 2003, In Press. Xia Z L, Liu X Y, Liu E F, Han R Q. 3D Simulation of Mutil-Gate MOSFET with Sub-100nm[J]. Chin. J. Semicond., 2003, 24(S1): 140.Export: BibTex EndNote

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Xia Zhiliang, Liu Xiaoyan, Liu Enfeng, Han Ruqi. 3D Simulation of Mutil-Gate MOSFET with Sub-100nm[J]. Journal of Semiconductors, 2003, In Press.

Xia Z L, Liu X Y, Liu E F, Han R Q. 3D Simulation of Mutil-Gate MOSFET with Sub-100nm[J]. Chin. J. Semicond., 2003, 24(S1): 140.

Export: BibTex EndNote

Citation:

Xia Zhiliang, Liu Xiaoyan, Liu Enfeng, Han Ruqi. 3D Simulation of Mutil-Gate MOSFET with Sub-100nm[J]. Journal of Semiconductors, 2003, In Press.

Xia Z L, Liu X Y, Liu E F, Han R Q. 3D Simulation of Mutil-Gate MOSFET with Sub-100nm[J]. Chin. J. Semicond., 2003, 24(S1): 140.

Export: BibTex EndNote

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3D Simulation of Mutil-Gate MOSFET with Sub-100nm

Institute of Microelectronics, Peking University, Beijing 100871, China,Institute of Microelectronics, Peking University, Beijing 100871, China,Institute of Microelectronics, Peking University, Beijing 100871, China and Institute of Microelectronics, Peking University, Beijing 100871, China

Received Date: 2016-03-16
Published Date: 2016-03-15

Abstract

Abstract

The characteristics of mutil-gate MOSFET ( double gates and trible gates FINFET) are simulated systemically by Using 3D simulation prsgram ISE. The I-V characteristics are investigated. The results show that the performances of Tri gate MOSFET are generally superior to ones of double gate's. However, With the decreasing of the FIN's width, double gate's performances trend to Tri gatre's.
- double gates MOSFET,
- threshold voltage,
- FINFET,
- 3D Simulation,
- Short-channel effect

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