| Citation: |
Xu Shengrui, Zhou Xiaowei, Hao Yue, Mao Wei, Zhang Jincheng, Zhang Zhongfen, Bai Lin, Zhang Jinfeng, Li Zhiming. Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition[J]. Journal of Semiconductors, 2009, 30(11): 113001. doi: 10.1088/1674-4926/30/11/113001
Xu S R, Zhou X W, Hao Y, Mao W, Zhang J C, Zhang Z F, Bai L, Zhang J F, Li Z M. Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition[J]. J. Semicond., 2009, 30(11): 113001. doi: 10.1088/1674-4926/30/11/113001.
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Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition
doi: 10.1088/1674-4926/30/11/113001
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Abstract
Nonpolar (1120) a-plane GaN films have been grown by low-pressure metal-organic vapor deposition on r-plane (1102) sapphire substrate. The structural and electrical properties of the a-plane GaN films are investigated by high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and van der Pauw Hall measurement. It is found that the Hall voltage shows more anisotropy than that of the c-plane samples; furthermore, the mobility changes with the degree of the van der Pauw square diagonal to the c direction, which shows significant electrical anisotropy. Further research indicates that electron mobility is strongly influenced by edge dislocations.-
Keywords:
- GaN
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