J. Semicond. > 2008, Volume 29 > Issue 11 > 2136-2142

PAPERS

Degradation of nMOS and pMOSFETs with Ultrathin Gate Oxide Under DT Stress

Hu Shigang, Hao Yue, Ma Xiaohua, Cao Yanrong, Chen Chi and Wu Xiaofeng

+ Author Affiliations

PDF

Abstract: The degradation of device parameters and the degradation of the stress induced leakage current (SILC) of thin tunnel gate oxide under constant direct-tunneling voltage stress are studied using nMOS and pMOSFETs with 1.4nm gate oxides.Experimental results show that there is a linear correlation between the degradation of the SILC and the degradation of Vth in MOSFETs during different direct-tunneling (DT) stresses.A model of tunneling assisted by interface traps and oxide trapped positive charges is developed to explain the origin of SILC during DT stress.

Key words: threshold voltageinterface trapsdirect tunnelingSILC

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 4046 Times PDF downloads: 1450 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 23 June 2008 Online: Published: 01 November 2008

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Hu Shigang, Hao Yue, Ma Xiaohua, Cao Yanrong, Chen Chi, Wu Xiaofeng. Degradation of nMOS and pMOSFETs with Ultrathin Gate Oxide Under DT Stress[J]. Journal of Semiconductors, 2008, In Press. Hu S G, Hao Y, Ma X H, Cao Y R, Chen C, Wu X F. Degradation of nMOS and pMOSFETs with Ultrathin Gate Oxide Under DT Stress[J]. J. Semicond., 2008, 29(11): 2136.Export: BibTex EndNote
      Citation:
      Hu Shigang, Hao Yue, Ma Xiaohua, Cao Yanrong, Chen Chi, Wu Xiaofeng. Degradation of nMOS and pMOSFETs with Ultrathin Gate Oxide Under DT Stress[J]. Journal of Semiconductors, 2008, In Press.

      Hu S G, Hao Y, Ma X H, Cao Y R, Chen C, Wu X F. Degradation of nMOS and pMOSFETs with Ultrathin Gate Oxide Under DT Stress[J]. J. Semicond., 2008, 29(11): 2136.
      Export: BibTex EndNote

      Degradation of nMOS and pMOSFETs with Ultrathin Gate Oxide Under DT Stress

      • Received Date: 2015-08-18
      • Accepted Date: 2008-05-16
      • Revised Date: 2008-06-23
      • Published Date: 2008-11-11

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return