J. Semicond. > 2016, Volume 37 > Issue 4 > 044001, doi: 10.1088/1674-4926/37/4/044001
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SEMICONDUCTOR DEVICES

Characteristic diode parameters in thermally annealed Ni/p-InP contacts

A. Turut, K. Ejderha, N. Yildirim and B. Abay

+ Author Affiliations

 Corresponding author: A. Turut, Email: abdulmecit.turut@medeniyet.edu.tr;amecit2002@yahoo.com

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Abstract: The Ni/p-InP Schottky diodes (SDs) have been prepared by DC magnetron sputtering deposition. After the diode fabrication, they have been thermally annealed at 700℃ for 1 min in N2 atmosphere. Then, the current-voltage characteristics of the annealed and non-annealed (as-deposited) SDs have been measured in the measurement temperature range of 60-400 K with steps of 20 K under dark conditions. After 700℃ annealing, an improvement in the ideality factor value has been observed from 60 to 200 K and the barrier height (BH) value approximately has remained unchanged in the measurement temperature range of 200-400 K. The BH of the annealed diode has decreased obeying the double-Gaussian distribution (GD) of the BHs with decreasing measurement temperature from 200 to 60 K. The BH for the as-deposited diode has decreased with decreasing temperature obeying the single-GD over the whole measurement temperature range. An effective Richardson constant value of 54.21 A/cm2K2 for the as-deposited SD has been obtained from the modified Richardson plot by the single-GD plot, which is in very close agreement with the value of 60 A/K2cm2 for p-type InP. The series resistance value of the annealed SD is lower than that of the non-annealed SD at each temperature and approximately has remained unchanged from 140 to 240 K. Thus, it can be said that an improvement in the diode parameters has been observed due to the thermal annealing at 700℃ for 1 min in N2 atmosphere.

Key words: Ni/p-InP, Schottky diodes, Gaussian distribution



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Fig. 1.  Forward and reverse bias current-voltage characteristics for the non-annealed Ni/p-InP Schottky diode in the measurement temperature range of 60-400 K.

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Fig. 2.  Forward and reverse bias $I$-$V$ characteristics,in the measurement temperature range of 60-400 K,for 700 $℃$ annealed Ni/p-InP Schottky diode after Schottky contact formation.

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Fig. 3.  (Color online) Zero-bias apparent barrier height and ideality factor versus measurement temperature curves for the Ni/p-InP Schottky diodes.

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Fig. 4.  (Color online) Comparison of the current-voltage characteristics of the Ni/p-InP Schottky diodes at some measurement temperatures.

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Fig. 5.  (Color online) Series resistance versus measurement temperature plots for the Ni/p-InP Schottky diodes.

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Fig. 6.  (Color online) Barrier height versus measurement temperature plots for the Ni/p-InP Schottky Diodes. The continuous curves for the 700 $℃$ annealed and non-annealed diodes were obtained using Equations (4) and (5),respectively. Equation (4) is called the double-Gaussian distribution expression and Equation (5) the single-Gaussian distribution expression.

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Fig. 7.  (Color online) Richardson and modified Richardson plots in the measurement temperature range of 60-400 K for the Ni/p-InP Schottky diodes. The dashed lines represent the linear fits to the experimental data.

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Fig. 8.  (Color online) Modified Richardson ln($I_{0}/T^{2})$-$q^{2}\sigma _{\rm s}^2/2k^{2}T^{2}$ versus ($kT)^{-1}$ plot for the as-deposited Ni/p-InP Schottky diode according to the single-Gaussian distribution of barrier heights in the measurement temperature range of 60-400 K,the solid straight line is the fit to the modified experimental data.

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Table 1.   Experimental barrier height $\Phi_{\rm b}$ (eV) and ideality factor $n$ for the non-annealed and 700 $℃$ annealed Ni/p-InP Schottky diodes as a function of the measurement temperature,$T$ (K).

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Table 2.   The parameters obtained for the Ni/p-type InP Schottky diodes.

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    Received: 10 June 2015 Revised: Online: Published: 01 April 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(4): 044001
      A. Turut, K. Ejderha, N. Yildirim, B. Abay. Characteristic diode parameters in thermally annealed Ni/p-InP contacts[J]. Journal of Semiconductors, 2016, 37(4): 044001. doi: 10.1088/1674-4926/37/4/044001 A. Turut, K. Ejderha, N. Yildirim, B. Abay. Characteristic diode parameters in thermally annealed Ni/p-InP contacts[J]. J. Semicond., 2016, 37(4): 044001. doi: 10.1088/1674-4926/37/4/044001.Export: BibTex EndNote
      Citation:
      A. Turut, K. Ejderha, N. Yildirim, B. Abay. Characteristic diode parameters in thermally annealed Ni/p-InP contacts[J]. Journal of Semiconductors, 2016, 37(4): 044001. doi: 10.1088/1674-4926/37/4/044001

      A. Turut, K. Ejderha, N. Yildirim, B. Abay. Characteristic diode parameters in thermally annealed Ni/p-InP contacts[J]. J. Semicond., 2016, 37(4): 044001. doi: 10.1088/1674-4926/37/4/044001.
      Export: BibTex EndNote
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      Characteristic diode parameters in thermally annealed Ni/p-InP contacts

      doi: 10.1088/1674-4926/37/4/044001
      • 1.

        Istanbul Medeniyet University, Faculty of Sciences, Department of Engineering Physics, 34720 Istanbul, Turkey

      • 2.

        Department of Electricity and Energy, Vocational High School of Technical Sciences, Bingol University, 12000 Bingöl, Turkey

      • 3.

        Bingöl University, Faculty of Sciences and Arts, Department of Physics, 12000 Bingöl, Turkey

      • 4.

        Department of Physics, Faculty of Sciences and Arts, Ataturk University, 25240 Erzurum, Turkey

      More Information
      • Corresponding author: Email: abdulmecit.turut@medeniyet.edu.tr;amecit2002@yahoo.com
      • Received Date: 2015-06-10
      • Accepted Date: 2015-10-15
      • Published Date: 2016-01-25

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