SEMICONDUCTOR DEVICES

Design of a high-performance PJFET for the input stage of an integrated operational amplifier

Shui Guohua, Tang Zhaohuan, Wang Zhikuan, Ou Hongqi, Yang Yonghui, Liu Yong and Wang Xueyi

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Abstract: With Shockley's approximate-channel theory and TCAD tools, a high-voltage, ultra-shallow junction PJFET for the input stage of an integrated operational amplifier (OPA) was realized. The high-performance PJFET device was developed in the Bi-FET process technology. The measured specifications are as follows. The top-gate junction depth is about 0.1 μm, the gate-leakage current is less than 5 pA, the breakdown voltage is more than 80 V, and the pinch-off voltage is optional between 0.8 and 2.0 V. The device and its Bi-FET process technology were used to design and process a high input-impedance integrated OPA. The measured results show that the OPA has a bias current of less than 50 pA, voltage noise of less than 50 nV/Hz1/2, and current noise of less than 0.05 pA/Hz1/2.

Key words: PJFET operational amplifier Bi-FET process ultra-shallow junction high input-impedance

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    Received: 18 August 2015 Revised: 31 August 2009 Online: Published: 01 January 2010

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      Shui Guohua, Tang Zhaohuan, Wang Zhikuan, Ou Hongqi, Yang Yonghui, Liu Yong, Wang Xueyi. Design of a high-performance PJFET for the input stage of an integrated operational amplifier[J]. Journal of Semiconductors, 2010, 31(1): 014004. doi: 10.1088/1674-4926/31/1/014004 Shui G H, Tang Z H, Wang Z K, Ou H Q, Yang Y H, Liu Y, Wang X Y. Design of a high-performance PJFET for the input stage of an integrated operational amplifier[J]. J. Semicond., 2010, 31(1): 014004. doi: 10.1088/1674-4926/31/1/014004.Export: BibTex EndNote
      Citation:
      Shui Guohua, Tang Zhaohuan, Wang Zhikuan, Ou Hongqi, Yang Yonghui, Liu Yong, Wang Xueyi. Design of a high-performance PJFET for the input stage of an integrated operational amplifier[J]. Journal of Semiconductors, 2010, 31(1): 014004. doi: 10.1088/1674-4926/31/1/014004

      Shui G H, Tang Z H, Wang Z K, Ou H Q, Yang Y H, Liu Y, Wang X Y. Design of a high-performance PJFET for the input stage of an integrated operational amplifier[J]. J. Semicond., 2010, 31(1): 014004. doi: 10.1088/1674-4926/31/1/014004.
      Export: BibTex EndNote

      Design of a high-performance PJFET for the input stage of an integrated operational amplifier

      doi: 10.1088/1674-4926/31/1/014004
      • Received Date: 2015-08-18
      • Accepted Date: 2009-07-06
      • Revised Date: 2009-08-31
      • Published Date: 2009-12-29

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