Chin. J. Semicond. > 2002, Volume 23 > Issue 6 > 565-570

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采用二甲基肼为氮源进行GaNAs的金属有机化学气相沉积生长(英文)

韦欣 , 马骁宇 , 王国宏 , 张广泽 , 朱晓鹏 and 陈良惠

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Key words: GaNAs, 金属有机化学气相沉积, 杂质, 沾污, 高分辨X射线双晶衍射, 二次离子质谱

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2002

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      • Received Date: 2015-08-19

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