| Citation: |
Su Yongbo, Jin Zhi, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming. Ultra high-speed InP/InGaAs DHBTs with ft of 203 GHz[J]. Journal of Semiconductors, 2009, 30(1): 014002. doi: 10.1088/1674-4926/30/1/014002
Su Y B, Jin Z, Cheng W, Liu X Y, Xu A H, Qi M. Ultra high-speed InP/InGaAs DHBTs with ft of 203 GHz[J]. J. Semicond., 2009, 30(1): 014002. doi: 10.1088/1674-4926/30/1/014002.
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Ultra high-speed InP/InGaAs DHBTs with ft of 203 GHz
doi: 10.1088/1674-4926/30/1/014002
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Abstract
InP/InGaAs/InP double heterojunction bipolar transistors (DHBTs) were designed for wide band digital and analog circuits, and fabricated using a conventional mesa structure with benzocyclobutene (BCB) passivation and planarization process techniques. Our devices exhibit a maximum of 203 GHz, which is the highest for DHBTs in mainland China. The emitter size is 1.0*20 μm2. The DC current gain b is 166, and BVCEO = 4.34 V. The devices reported here employ a 40 nm highly doped InGaAs base region and a 203 nm InGaAsP composite structure. They are suitable for high speed and intermediate power applications.
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