SEMICONDUCTOR MATERIALS

Growth of CdS crystals by the physical vapor transport method

Cheng Hongjuan, Xu Yongkuan, Yang Wei, Yu Xianglu, Yan Ruyue and Lai Zhanping

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Abstract: Based on the physical vapor transport (PVT) method, the growth of large-size CdS crystals inside a vertical semi-closed tube is studied. Firstly, in order to ensure 1D diffusion-advection transport, multi-thin tubes are used in the growth tube. The XRD spectra of the CdS crystal grown in this configuration indicates that the crystal quality has clearly been improved, where the FWHM is 58.5 arcsec. Secondly, theoretical and experimental growth rates under different total pressures are compared; the results show that the experiential growth rate equation is valid for our semi-tube growth, and it could be used to estimate the growth rate and maximum growth time under different total pressures.

Key words: CdS

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    Received: 18 August 2015 Revised: 22 May 2009 Online: Published: 01 October 2009

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      Cheng Hongjuan, Xu Yongkuan, Yang Wei, Yu Xianglu, Yan Ruyue, Lai Zhanping. Growth of CdS crystals by the physical vapor transport method[J]. Journal of Semiconductors, 2009, 30(10): 103002. doi: 10.1088/1674-4926/30/10/103002 Cheng H J, Xu Y K, Yang W, Yu X L, Yan R Y, Lai Z P. Growth of CdS crystals by the physical vapor transport method[J]. J. Semicond., 2009, 30(10): 103002. doi:  10.1088/1674-4926/30/10/103002.Export: BibTex EndNote
      Citation:
      Cheng Hongjuan, Xu Yongkuan, Yang Wei, Yu Xianglu, Yan Ruyue, Lai Zhanping. Growth of CdS crystals by the physical vapor transport method[J]. Journal of Semiconductors, 2009, 30(10): 103002. doi: 10.1088/1674-4926/30/10/103002

      Cheng H J, Xu Y K, Yang W, Yu X L, Yan R Y, Lai Z P. Growth of CdS crystals by the physical vapor transport method[J]. J. Semicond., 2009, 30(10): 103002. doi:  10.1088/1674-4926/30/10/103002.
      Export: BibTex EndNote

      Growth of CdS crystals by the physical vapor transport method

      doi: 10.1088/1674-4926/30/10/103002
      • Received Date: 2015-08-18
      • Accepted Date: 2009-02-19
      • Revised Date: 2009-05-22
      • Published Date: 2009-09-28

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