Chin. J. Semicond. > 2005, Volume 26 > Issue S1 > 216-219

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Analysis on Influencing Factors of Bend Loss of Silicon-on-Insulator Waveguides

Chen Yuanyuan, Yu Jinzhong, Yan Qingfeng and Chen Shaowu

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Abstract: The influencing factors of bend loss of silicon-on-insulator (SOI) bend waveguides are analyzed by means of effective index method (EIM) and two dimensional beam propagation method (2D-BPM).The modeling results indicate that the bend loss decreases with the increase of bend radii and waveguide width,as well as with the decrease of the etching ratio of the rib waveguide.Meanwhile,improvement of the rib waveguide structure,such as constructing the SOI waveguide with asymmetric rib structure,or etching groove in outside of bend waveguide,will contribute to lower the bend loss of SOI bend waveguides.

Key words: silicon-on-insulatorbend waveguidebend lossintegrated optics

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2005

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      Chen Yuanyuan, Yu Jinzhong, Yan Qingfeng, Chen Shaowu. Analysis on Influencing Factors of Bend Loss of Silicon-on-Insulator Waveguides[J]. Journal of Semiconductors, 2005, In Press. Chen Y Y, Yu J Z, Yan Q F, Chen S W. Analysis on Influencing Factors of Bend Loss of Silicon-on-Insulator Waveguides[J]. Chin. J. Semicond., 2005, 26(13): 216.Export: BibTex EndNote
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      Chen Yuanyuan, Yu Jinzhong, Yan Qingfeng, Chen Shaowu. Analysis on Influencing Factors of Bend Loss of Silicon-on-Insulator Waveguides[J]. Journal of Semiconductors, 2005, In Press.

      Chen Y Y, Yu J Z, Yan Q F, Chen S W. Analysis on Influencing Factors of Bend Loss of Silicon-on-Insulator Waveguides[J]. Chin. J. Semicond., 2005, 26(13): 216.
      Export: BibTex EndNote

      Analysis on Influencing Factors of Bend Loss of Silicon-on-Insulator Waveguides

      • Received Date: 2015-08-19

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