J. Semicond. > 2008, Volume 29 > Issue 2 > 244-250

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Multiple Node Upset in SEU Hardened Storage Cells

Liu Biwei, Hao Yue and Chen Shuming

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Abstract: We study the problem of multiple node upset (MNU) using three-dimensional device simulation.The results show the transient floating node and charge lateral diffusion are the key reasons for MNU.We compare the MNU with multiple bit upset (MBU), and find that their characteristics are different.Methods to avoid MNU are also discussed.

Key words: multiple node upsethardened cellcharge collection

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    Received: 18 August 2015 Revised: 07 October 2007 Online: Published: 01 February 2008

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      Liu Biwei, Hao Yue, Chen Shuming. Multiple Node Upset in SEU Hardened Storage Cells[J]. Journal of Semiconductors, 2008, In Press. Liu B W, Hao Y, Chen S M. Multiple Node Upset in SEU Hardened Storage Cells[J]. J. Semicond., 2008, 29(2): 244.Export: BibTex EndNote
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      Liu Biwei, Hao Yue, Chen Shuming. Multiple Node Upset in SEU Hardened Storage Cells[J]. Journal of Semiconductors, 2008, In Press.

      Liu B W, Hao Y, Chen S M. Multiple Node Upset in SEU Hardened Storage Cells[J]. J. Semicond., 2008, 29(2): 244.
      Export: BibTex EndNote

      Multiple Node Upset in SEU Hardened Storage Cells

      • Received Date: 2015-08-18
      • Accepted Date: 2007-08-29
      • Revised Date: 2007-10-07
      • Published Date: 2008-01-31

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