SEMICONDUCTOR INTEGRATED CIRCUITS

A fully monolithic 0.18 μm SiGe BiCMOS power amplifier design

Chen Lei, Ruan Ying, Su Jie, Zhang Shulin, Shi Chunqi and Lai Zongsheng

+ Author Affiliations

PDF

Abstract: A fully monolithic power amplifier (PA) for multi-mode front end IC integration is presented. The PA is fabricated in an IBM 7WL 0.18 μm SiGe BiCMOS process with all the matching networks integrated on a chip. After load-pull test to find the best power stage size and layout optimization, the measured results show that the PA can obtain a 24 dBm maximum output power at 2.4 GHz, the output 1 dB compression point is 21 dBm at 5 dBm input, and the PAE is 18%. This PA is complete on-chip tested without any bonding wires and on-board matching, targeting fully power module integration in multi-mode system on chip.

Key words: SiGe

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3495 Times PDF downloads: 2485 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 28 November 2010 Online: Published: 01 May 2011

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Chen Lei, Ruan Ying, Su Jie, Zhang Shulin, Shi Chunqi, Lai Zongsheng. A fully monolithic 0.18 μm SiGe BiCMOS power amplifier design[J]. Journal of Semiconductors, 2011, 32(5): 055005. doi: 10.1088/1674-4926/32/5/055005 Chen L, Ruan Y, Su J, Zhang S L, Shi C Q, Lai Z S. A fully monolithic 0.18 μm SiGe BiCMOS power amplifier design[J]. J. Semicond., 2011, 32(5): 055005. doi: 10.1088/1674-4926/32/5/055005.Export: BibTex EndNote
      Citation:
      Chen Lei, Ruan Ying, Su Jie, Zhang Shulin, Shi Chunqi, Lai Zongsheng. A fully monolithic 0.18 μm SiGe BiCMOS power amplifier design[J]. Journal of Semiconductors, 2011, 32(5): 055005. doi: 10.1088/1674-4926/32/5/055005

      Chen L, Ruan Y, Su J, Zhang S L, Shi C Q, Lai Z S. A fully monolithic 0.18 μm SiGe BiCMOS power amplifier design[J]. J. Semicond., 2011, 32(5): 055005. doi: 10.1088/1674-4926/32/5/055005.
      Export: BibTex EndNote

      A fully monolithic 0.18 μm SiGe BiCMOS power amplifier design

      doi: 10.1088/1674-4926/32/5/055005
      • Received Date: 2015-08-18
      • Accepted Date: 2010-10-08
      • Revised Date: 2010-11-28
      • Published Date: 2011-04-21

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return