J. Semicond. > 2008, Volume 29 > Issue 2 > 210-213

LETTERS

Synthesis and Characterization of GaN Nanorods by Ammoniating Ga2O3/Co Films Deposited on Si(111) Substrates

Qin Lixia, Xue Chengshan, Zhuang Huizhao, Yang Zhaozhu, Chen Jinhua and Li Hong

+ Author Affiliations

PDF

Abstract: GaN nanorods are successfully synthesized on Si(111) substrates with magnetron sputtering through ammoniating Ga2O3/Co films at 950℃.X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and Fourier-transform infrared spectroscopy are used to characterize the samples.The results demonstrate that the nanorods are single-crystal GaN with a hexagonal wurtzite structure and possess relatively smooth surfaces.The growth mechanism of GaN nanorods is also discussed.

Key words: nanorodscrystal growthscanning and transmission electron microscopy

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 3119 Times PDF downloads: 919 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 24 September 2007 Online: Published: 01 February 2008

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Qin Lixia, Xue Chengshan, Zhuang Huizhao, Yang Zhaozhu, Chen Jinhua, Li Hong. Synthesis and Characterization of GaN Nanorods by Ammoniating Ga2O3/Co Films Deposited on Si(111) Substrates[J]. Journal of Semiconductors, 2008, In Press. Qin L X, Xue C S, Zhuang H Z, Yang Z Z, Chen J H, Li H. Synthesis and Characterization of GaN Nanorods by Ammoniating Ga2O3/Co Films Deposited on Si(111) Substrates[J]. J. Semicond., 2008, 29(2): 210.Export: BibTex EndNote
      Citation:
      Qin Lixia, Xue Chengshan, Zhuang Huizhao, Yang Zhaozhu, Chen Jinhua, Li Hong. Synthesis and Characterization of GaN Nanorods by Ammoniating Ga2O3/Co Films Deposited on Si(111) Substrates[J]. Journal of Semiconductors, 2008, In Press.

      Qin L X, Xue C S, Zhuang H Z, Yang Z Z, Chen J H, Li H. Synthesis and Characterization of GaN Nanorods by Ammoniating Ga2O3/Co Films Deposited on Si(111) Substrates[J]. J. Semicond., 2008, 29(2): 210.
      Export: BibTex EndNote

      Synthesis and Characterization of GaN Nanorods by Ammoniating Ga2O3/Co Films Deposited on Si(111) Substrates

      • Received Date: 2015-08-18
      • Accepted Date: 2007-09-03
      • Revised Date: 2007-09-24
      • Published Date: 2008-01-31

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return