| Citation: |
Chai Chunlin, Yang Shaoyan, Liu Zhikai, Chen Nuofu. Investigation of PL of CeO2／Si Thin Film Fabricated Using Magetron Control Sputtering System[J]. Journal of Semiconductors, 2005, In Press.
Chai C L, Yang S Y, Liu Z K, Chen N F. Investigation of PL of CeO2／Si Thin Film Fabricated Using Magetron Control Sputtering System[J]. Chin. J. Semicond., 2005, 26(13): 61.
Export: BibTex EndNote
|
Investigation of PL of CeO2／Si Thin Film Fabricated Using Magetron Control Sputtering System
-
Abstract
The growth of CeO2 thin films using reactive magnetron control sputtering system is investigated.It is concluded that the crystal quality of thin film is dependent on the ratio of O2 to Ar.The PL spectrum of CeO2 thin film is measured at room temperature.The results show that the PL is originated from the oxygen vacancies.-
Keywords:
- magnetron cantrol sputtering,
- CeO2 thin film,
- PL
-
References
-
Proportional views
DownLoad: