SEMICONDUCTOR DEVICES

A high-voltage SOI MOSFET with a compensation layer on the trenched buried oxide layer

Qiuming Zhao1, Qi Li1, , Ning Tang1 and Yongchang Li2

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 Corresponding author: Li Qi, Email:lqmoon@gmail.com

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Abstract: A new silicon-on-insulator (SOI) high-voltage MOSFET structure with a compensation layer on the trenched buried oxide layer (CL T-LDMOS) is proposed. The high density inverse interface charges at the top surface of the buried oxide layer (BOX) enhance the electric field in the BOX and a uniform surface electric field profile is obtained, which results in the enhancement of the breakdown voltage (BV). The compensation layer can provide additional P-type charges, and the optimal drift region concentration is increased in order to satisfy the reduced surface electric field (RESURF) condition. The numerical simulation results indicate that the vertical electric field in the BOX increases to 6 MV/cm and the BV of the proposed device increases by 300% in comparison to a conventional SOI LDMOS, while maintaining low on-resistance.

Key words: trenched buried oxide layerbreakdown voltageon-resistancecompensation layer



[1]
Merchant S, Arnold E, Baumgart S, et al. Realization of high breakdown voltage (> 700 V) in thin SOI device. ISPSD, 1991:31
[2]
Li Q, Zhang B, Li Z. A new partial SOI high voltage device with double-faced step buried oxide structure. Acta Physica Sinica, 2008, 57(10):6565 http://wulixb.iphy.ac.cn/EN/Y2008/V57/I10/6565
[3]
Ramakrishna T, Shyam H, Sankara E M. Realizing high breakdown voltage (> 600 V) in partial SOI technology. Solid-State Electron, 2004, 48:1655 doi: 10.1016/j.sse.2004.04.005
[4]
Luo X R, Li Z J, Zhang B, et al. A novel structure and its breakdown mechanism of a SOI high voltage device with a shield trench. Chinese Journal of Semiconductors, 2005, 26(11):2154 http://www.sciencedirect.com/science/article/pii/S138694771530196X
[5]
Zhang B, Li Z, Hu S, et al. Field enhancement for dielectric layer of high-voltage devices on silicon on insulator. IEEE Trans Electron Devices, 2009, 56(10):2327 doi: 10.1109/TED.2009.2028405
[6]
Wang W L, Zhang B, Chen W J, et al. High voltage SOI SJ-LDMOS with dynamic back-gate voltage. Electron Lett, 2009, 45(4):233 doi: 10.1049/el:20093005
[7]
Luo X, Zhang B, Li Z, et al. A novel 700-V SOI LDMOS with double-sided trench. IEEE Electron Device Lett, 2007, 28(5):422 doi: 10.1109/LED.2007.894648
[8]
Ge R, Luo X, Jiang Y H, et al. A low on-resistance SOI LDMOS using a trench gate and a recessed drain. Journal of Semiconductors, 2012, 33(7):074005 doi: 10.1088/1674-4926/33/7/074005
Fig. 1.  Schematic cross section of CL T-LDMOS.

Fig. 2.  Equipotential contours of (a) the CL T-LDMOS and (b) the conventional SOI LDMOS. (c) Hole concentration in a trench under the drain for the CL T-LDMOS and conventional T-LDMOS. (d) Hole concentration along the top surface of the SOI in CL T-LDMOS. (e) Surface electric filed distributions. (f) The vertical electric field and potential distributions.

Fig. 3.  Breakdown voltage as a function of (a) $N_{\rm d}$, (b) $t_{\rm c}$, (c) parameters of the trench.

Fig. 4.  Influence of (a) $N_{\rm d}$ and (b) $L_{\rm d}$ on the breakdown voltage and on-resistance.

Table 1.   Comparison performances between the CL T-LDMOS and the other SOI LDMOS with a trenched BOX.

[1]
Merchant S, Arnold E, Baumgart S, et al. Realization of high breakdown voltage (> 700 V) in thin SOI device. ISPSD, 1991:31
[2]
Li Q, Zhang B, Li Z. A new partial SOI high voltage device with double-faced step buried oxide structure. Acta Physica Sinica, 2008, 57(10):6565 http://wulixb.iphy.ac.cn/EN/Y2008/V57/I10/6565
[3]
Ramakrishna T, Shyam H, Sankara E M. Realizing high breakdown voltage (> 600 V) in partial SOI technology. Solid-State Electron, 2004, 48:1655 doi: 10.1016/j.sse.2004.04.005
[4]
Luo X R, Li Z J, Zhang B, et al. A novel structure and its breakdown mechanism of a SOI high voltage device with a shield trench. Chinese Journal of Semiconductors, 2005, 26(11):2154 http://www.sciencedirect.com/science/article/pii/S138694771530196X
[5]
Zhang B, Li Z, Hu S, et al. Field enhancement for dielectric layer of high-voltage devices on silicon on insulator. IEEE Trans Electron Devices, 2009, 56(10):2327 doi: 10.1109/TED.2009.2028405
[6]
Wang W L, Zhang B, Chen W J, et al. High voltage SOI SJ-LDMOS with dynamic back-gate voltage. Electron Lett, 2009, 45(4):233 doi: 10.1049/el:20093005
[7]
Luo X, Zhang B, Li Z, et al. A novel 700-V SOI LDMOS with double-sided trench. IEEE Electron Device Lett, 2007, 28(5):422 doi: 10.1109/LED.2007.894648
[8]
Ge R, Luo X, Jiang Y H, et al. A low on-resistance SOI LDMOS using a trench gate and a recessed drain. Journal of Semiconductors, 2012, 33(7):074005 doi: 10.1088/1674-4926/33/7/074005
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    Received: 02 July 2012 Revised: 26 September 2012 Online: Published: 01 March 2013

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      Qiuming Zhao, Qi Li, Ning Tang, Yongchang Li. A high-voltage SOI MOSFET with a compensation layer on the trenched buried oxide layer[J]. Journal of Semiconductors, 2013, 34(3): 034003. doi: 10.1088/1674-4926/34/3/034003 Q M Zhao, Q Li, N Tang, Y C Li. A high-voltage SOI MOSFET with a compensation layer on the trenched buried oxide layer[J]. J. Semicond., 2013, 34(3): 034003. doi: 10.1088/1674-4926/34/3/034003.Export: BibTex EndNote
      Citation:
      Qiuming Zhao, Qi Li, Ning Tang, Yongchang Li. A high-voltage SOI MOSFET with a compensation layer on the trenched buried oxide layer[J]. Journal of Semiconductors, 2013, 34(3): 034003. doi: 10.1088/1674-4926/34/3/034003

      Q M Zhao, Q Li, N Tang, Y C Li. A high-voltage SOI MOSFET with a compensation layer on the trenched buried oxide layer[J]. J. Semicond., 2013, 34(3): 034003. doi: 10.1088/1674-4926/34/3/034003.
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      A high-voltage SOI MOSFET with a compensation layer on the trenched buried oxide layer

      doi: 10.1088/1674-4926/34/3/034003
      Funds:

      the Guangxi Key Science and Technology Program of China 11107001-20

      Project supported by the Guangxi Natural Science Foundation of China (No. 2010GXNSFB013054) and the Guangxi Key Science and Technology Program of China (No. 11107001-20)

      the Guangxi Natural Science Foundation of China 2010GXNSFB013054

      More Information
      • Corresponding author: Li Qi, Email:lqmoon@gmail.com
      • Received Date: 2012-07-02
      • Revised Date: 2012-09-26
      • Published Date: 2013-03-01

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