SEMICONDUCTOR MATERIALS

Effect of hydrogen on low temperature epitaxial growth of polycrystalline silicon by hot wire chemical vapor deposition

Yong Cao, Hailong Zhang, Fengzhen Liu, Meifang Zhu and Gangqiang Dong

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 Corresponding author: Fengzhen Liu, E-mail: liufz@ucas.ac.cn

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Abstract: Polycrystalline silicon (poly-Si) films were prepared by hot-wire chemical vapor deposition (HWCVD) at a low substrate temperature of 525 ℃. The influence of hydrogen on the epitaxial growth of ploy-Si films was investigated. Raman spectra show that the poly-Si films are fully crystallized at 525 ℃ with a different hydrogen dilution ratio (50%—91.7%). X-ray diffraction, grazing incidence X-ray diffraction and SEM images show that the poly-Si thin films present (100) preferred orientation on (100) c-Si substrate in the high hydrogen dilution condition. The P-type poly-Si film prepared with a hydrogen dilution ratio of 91.7% shows a hall mobility of 8.78 cm2/(V·s) with a carrier concentration of 1.3 × 1020 cm-3, which indicates that the epitaxial poly-Si film prepared by HWCVD has the possibility to be used in photovoltaic and TFT devices.

Key words: polycrystalline siliconhot-wire chemical vapor depositionlow temperature epitaxial growth



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Fig. 1.  (a) Raman spectra of sample 1-1, 1-2, and 1-3. The fitting curve and composing peaks of sample 1-3 are also shown. The Raman intensities of sample 1-2, 1-1 are added to 0.2 and 0.4, respectively, to distinguish these curves. (b) FWHM of the Raman peak at 520 cm$^{-1}$ and growth rates of the series-1 samples deposited on Si (100) substrate.

Fig. 2.  (Color online) (a) XRD patterns of series-1 samples with a constant total gas flow rate. The inset shows the details of the (400) peaks. The (400) diffraction peak intensity gradually increases with the hydrogen dilution ratio increasing. (b) GIXRD patterns of the series-1 samples. The inset shows the details of the (111) peaks.

Fig. 3.  (a) Reflectance spectra of sample 1-3 and polished Si wafer. (b) SEM cross-sectional view near the surface of the sample 1-3.

Fig. 4.  (Color online) (a) XRD and (b) GIXRD patterns of series-2 samples. Silane flux was kept constant (6 sccm); hydrogen flux varied between 7 and 21 sccm.

Table 1.   Deposition parameters of the two series poly-Si thin films. The sample thicknesses are also included.

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    Received: 24 June 2014 Revised: Online: Published: 01 February 2015

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      Yong Cao, Hailong Zhang, Fengzhen Liu, Meifang Zhu, Gangqiang Dong. Effect of hydrogen on low temperature epitaxial growth of polycrystalline silicon by hot wire chemical vapor deposition[J]. Journal of Semiconductors, 2015, 36(2): 023004. doi: 10.1088/1674-4926/36/2/023004 Y Cao, H L Zhang, F Z Liu, M F Zhu, G Q Dong. Effect of hydrogen on low temperature epitaxial growth of polycrystalline silicon by hot wire chemical vapor deposition[J]. J. Semicond., 2015, 36(2): 023004. doi: 10.1088/1674-4926/36/2/023004.Export: BibTex EndNote
      Citation:
      Yong Cao, Hailong Zhang, Fengzhen Liu, Meifang Zhu, Gangqiang Dong. Effect of hydrogen on low temperature epitaxial growth of polycrystalline silicon by hot wire chemical vapor deposition[J]. Journal of Semiconductors, 2015, 36(2): 023004. doi: 10.1088/1674-4926/36/2/023004

      Y Cao, H L Zhang, F Z Liu, M F Zhu, G Q Dong. Effect of hydrogen on low temperature epitaxial growth of polycrystalline silicon by hot wire chemical vapor deposition[J]. J. Semicond., 2015, 36(2): 023004. doi: 10.1088/1674-4926/36/2/023004.
      Export: BibTex EndNote

      Effect of hydrogen on low temperature epitaxial growth of polycrystalline silicon by hot wire chemical vapor deposition

      doi: 10.1088/1674-4926/36/2/023004
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      Project supported by the Beijing City Science and Technology Project (No. D121100001812003) and the National Basic Research Program of China (No. 2011CBA00705).

      More Information
      • Corresponding author: E-mail: liufz@ucas.ac.cn
      • Received Date: 2014-06-24
      • Accepted Date: 2014-08-19
      • Published Date: 2015-01-25

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