SEMICONDUCTOR INTEGRATED CIRCUITS

An ultra-broadband distributed passive gate-pumped mixer in 0.18 μm CMOS

Zhenxing Yu and Jun Feng

+ Author Affiliations

 Corresponding author: Feng Jun, Email:fengjun_seu@seu.edu.cn

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Abstract: A broadband distributed passive gate-pumped mixer (DPGM) using standard 0.18 μm CMOS technology is presented. By employing distributed topology, the mixer can operate at a wide frequency range. In addition, a fourth-order low pass filter is applied to improve the port-to-port isolation. This paper also analyzes the impedance match and conversion loss of the mixer, which consumes zero dc power and exhibits a measured conversion loss of 9.4-17 dB from 3 to 40 GHz with a compact size of 0.78 mm2. The input referred 1 dB compression point is higher than 4 dBm at a fixed IF frequency of 500 MHz and RF frequency of 23 GHz, and the measured RF-to-LO, RF-to-IF and LO-to-IF isolations are better than 21, 38 and 45 dB, respectively. The mixer is suitable for WLAN, UWB, Wi-Max, automotive radar systems and other millimeter-wave radio applications.

Key words: distributed mixergate-pumped passive mixermillimeter-wavelow power



[1]
Wenger J. Auto-motive radar:status and perspectives. Compound Semiconductor Integrated Circuit Symposium, 2005:21 http://ieeexplore.ieee.org/document/1531741/?reload=true&arnumber=1531741
[2]
Federal Communication Commission. $§$15. 252
[3]
Tsai J H. Design of 40-108-GHz low-power and high-speed CMOS up/down-conversion ring mixers for multi-standard MMW radio applications. IEEE Trans Microw Theory Tech, 2012, 60(3):670 doi: 10.1109/TMTT.2011.2178258
[4]
Tai J H. Design of 1.2-V broadband high data-rate MMW CMOS I/Q modulator and demodulator using modified Gilbert-cell mixer. IEEE Trans Microw Theory Tech, 2011, 59(5):1350 doi: 10.1109/TMTT.2011.2116035
[5]
Bao M Q, Jacobsson H, Aspemyr L, et al. A 9-31GHz sub-harmonic passive mixer in 90 nm CMOS technology. IEEE J Solid-State Circuits, 2006, 41(10):2257 doi: 10.1109/JSSC.2006.881551
[6]
Lin S K, Kuo J L, Wang H. A 60 GHz sub-harmonic resistive FET mixer using 0.13μm CMOS technology. IEEE Microw Wireless Compon Lett, 2011, 21(10):562 doi: 10.1109/LMWC.2011.2165701
[7]
Tsai J H, Huang T W. 35-65 GHz CMOS broadband modulator and demodulator with sub-harmonic pumping for MMW wireless gigabit applications. IEEE Trans Microw Theory Tech, 2007, 55(10):2075 doi: 10.1109/TMTT.2007.905497
[8]
Yang H Y, Tsai J H, Wang C H, et al. Design and analysis of a 0.8-77.5 GHz ultra-broadband distributed drain mixer using 0.13μm CMOS technology. IEEE Trans Microw Theory Tech, 2009, 57(3):562 doi: 10.1109/TMTT.2009.2013299
[9]
Lin C H, Lin C M, Lai Y A, et al. A 26-38 GHz monolithic doubly balanced mixer. IEEE Microw Wireless Compon Lett, 2008, 18(9):623 doi: 10.1109/LMWC.2008.2002465
[10]
Lai Y A, Lin C M, Lin C H, et al. A new Ka-band doubly balanced mixer based on Lange coupler. IEEE Microw Wireless Compon Lett, 2008, 18(7):458 doi: 10.1109/LMWC.2008.925110
[11]
Ellinger F, Rodoni L C, Sialm G, et al. 30-40 GHz drain pumped passive down mixer MMIC fabricated on VLSI SOI CMOS technology. IEEE Trans Microw Theory Tech, 2004, 52(5):1382 doi: 10.1109/TMTT.2004.827004
[12]
Yang H Y, Tsai J H, Huang T W, et al. Analysis of a new 33-58-GHz doubly balanced drain mixer in 90-nm CMOS technology. IEEE Trans Microw Theory Tech, 2012, 60(4):1057 doi: 10.1109/TMTT.2012.2183609
[13]
Chen J H, Kuo C C, Hsin Y M, et al. A 15-50 GHz broadband resistive FET ring mixer using 0.18-μm CMOS technology. IEEE Microwave Symposium Digest, 2010:784
Fig. 1.  The single-stage GPM.

Fig. 2.  Schematic of the DPGM.

Fig. 3.  The input impedance of the distributed mixer at the LO port. $l$ is the total length of the gate line.

Fig. 4.  Simulation results of LO return loss versus frequency.

Fig. 5.  The simulation results of conversion gain versus $V_{\rm GS}$.

Fig. 6.  The simulation results of conversion gain versus LO input power.

Fig. 7.  The simulation results of the conversion gain versus RF frequency with different $N$.

Fig. 8.  The unit cell of the drain transmission line.

Fig. 9.  Chip photograph of the DPGM.

Fig. 10.  Measurement results of RF return loss.

Fig. 11.  Simulation and measurement results of LO return loss.

Fig. 12.  Simulation and measurement results of IF return loss.

Fig. 13.  Measurement results of conversion gain versus IF frequency.

Fig. 14.  Measurement results of IF output power versus RF input power at 23 GHz.

Fig. 15.  Measurement results of the LO-to-IF and RF-to-IF isolations.

Fig. 16.  Measurement results of the LO-to-RF isolations.

Table 1.   The recently reported wideband mixers.

[1]
Wenger J. Auto-motive radar:status and perspectives. Compound Semiconductor Integrated Circuit Symposium, 2005:21 http://ieeexplore.ieee.org/document/1531741/?reload=true&arnumber=1531741
[2]
Federal Communication Commission. $§$15. 252
[3]
Tsai J H. Design of 40-108-GHz low-power and high-speed CMOS up/down-conversion ring mixers for multi-standard MMW radio applications. IEEE Trans Microw Theory Tech, 2012, 60(3):670 doi: 10.1109/TMTT.2011.2178258
[4]
Tai J H. Design of 1.2-V broadband high data-rate MMW CMOS I/Q modulator and demodulator using modified Gilbert-cell mixer. IEEE Trans Microw Theory Tech, 2011, 59(5):1350 doi: 10.1109/TMTT.2011.2116035
[5]
Bao M Q, Jacobsson H, Aspemyr L, et al. A 9-31GHz sub-harmonic passive mixer in 90 nm CMOS technology. IEEE J Solid-State Circuits, 2006, 41(10):2257 doi: 10.1109/JSSC.2006.881551
[6]
Lin S K, Kuo J L, Wang H. A 60 GHz sub-harmonic resistive FET mixer using 0.13μm CMOS technology. IEEE Microw Wireless Compon Lett, 2011, 21(10):562 doi: 10.1109/LMWC.2011.2165701
[7]
Tsai J H, Huang T W. 35-65 GHz CMOS broadband modulator and demodulator with sub-harmonic pumping for MMW wireless gigabit applications. IEEE Trans Microw Theory Tech, 2007, 55(10):2075 doi: 10.1109/TMTT.2007.905497
[8]
Yang H Y, Tsai J H, Wang C H, et al. Design and analysis of a 0.8-77.5 GHz ultra-broadband distributed drain mixer using 0.13μm CMOS technology. IEEE Trans Microw Theory Tech, 2009, 57(3):562 doi: 10.1109/TMTT.2009.2013299
[9]
Lin C H, Lin C M, Lai Y A, et al. A 26-38 GHz monolithic doubly balanced mixer. IEEE Microw Wireless Compon Lett, 2008, 18(9):623 doi: 10.1109/LMWC.2008.2002465
[10]
Lai Y A, Lin C M, Lin C H, et al. A new Ka-band doubly balanced mixer based on Lange coupler. IEEE Microw Wireless Compon Lett, 2008, 18(7):458 doi: 10.1109/LMWC.2008.925110
[11]
Ellinger F, Rodoni L C, Sialm G, et al. 30-40 GHz drain pumped passive down mixer MMIC fabricated on VLSI SOI CMOS technology. IEEE Trans Microw Theory Tech, 2004, 52(5):1382 doi: 10.1109/TMTT.2004.827004
[12]
Yang H Y, Tsai J H, Huang T W, et al. Analysis of a new 33-58-GHz doubly balanced drain mixer in 90-nm CMOS technology. IEEE Trans Microw Theory Tech, 2012, 60(4):1057 doi: 10.1109/TMTT.2012.2183609
[13]
Chen J H, Kuo C C, Hsin Y M, et al. A 15-50 GHz broadband resistive FET ring mixer using 0.18-μm CMOS technology. IEEE Microwave Symposium Digest, 2010:784
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    Received: 06 January 2013 Revised: 04 February 2013 Online: Published: 01 August 2013

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      Zhenxing Yu, Jun Feng. An ultra-broadband distributed passive gate-pumped mixer in 0.18 μm CMOS[J]. Journal of Semiconductors, 2013, 34(8): 085005. doi: 10.1088/1674-4926/34/8/085005 Z X Yu, J Feng. An ultra-broadband distributed passive gate-pumped mixer in 0.18 μm CMOS[J]. J. Semicond., 2013, 34(8): 085005. doi: 10.1088/1674-4926/34/8/085005.Export: BibTex EndNote
      Citation:
      Zhenxing Yu, Jun Feng. An ultra-broadband distributed passive gate-pumped mixer in 0.18 μm CMOS[J]. Journal of Semiconductors, 2013, 34(8): 085005. doi: 10.1088/1674-4926/34/8/085005

      Z X Yu, J Feng. An ultra-broadband distributed passive gate-pumped mixer in 0.18 μm CMOS[J]. J. Semicond., 2013, 34(8): 085005. doi: 10.1088/1674-4926/34/8/085005.
      Export: BibTex EndNote

      An ultra-broadband distributed passive gate-pumped mixer in 0.18 μm CMOS

      doi: 10.1088/1674-4926/34/8/085005
      Funds:

      the State Key Development Program for Basic Research of China 2010CB327404

      Project supported by the State Key Development Program for Basic Research of China (No. 2010CB327404)

      More Information
      • Corresponding author: Feng Jun, Email:fengjun_seu@seu.edu.cn
      • Received Date: 2013-01-06
      • Revised Date: 2013-02-04
      • Published Date: 2013-08-01

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