SEMICONDUCTOR MATERIALS

Analysis of the anisotropy in an m-plane GaN film via HVPE on a-LiAlO2 substrate

Tian Mi, Xiu Xiangqian, Zhang Rong, Hua Xuemei, Liu Zhanhui, Han Ping, Xie Zili and Zheng Youdou

+ Author Affiliations

PDF

Abstract: A 0.09 mm m-plane GaN film is deposited via hydride vapor phase epitaxy (HVPE) on a γ-LiAlO2 substrate. To research the anisotropy between directions with different angles with the c-axis in the m plane, photoluminescence (PL) measurements were carried out. The results show that the electronic transition was influenced by the electric field along the c-axis, which results in an obvious anisotropy, but the influence was weakened by the hexagonal symmetry along the c-axis.

Key words: γ-LiAlO2

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3566 Times PDF downloads: 1642 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 30 April 2009 Online: Published: 01 September 2009

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Tian Mi, Xiu Xiangqian, Zhang Rong, Hua Xuemei, Liu Zhanhui, Han Ping, Xie Zili, Zheng Youdou. Analysis of the anisotropy in an m-plane GaN film via HVPE on a-LiAlO2 substrate[J]. Journal of Semiconductors, 2009, 30(9): 093004. doi: 10.1088/1674-4926/30/9/093004 Tian M, Xiu X Q, Zhang R, Hua X M, Liu Z H, Han P, Xie Z L, Zheng Y D. Analysis of the anisotropy in an m-plane GaN film via HVPE on a-LiAlO2 substrate[J]. J. Semicond., 2009, 30(9): 093004. doi: 10.1088/1674-4926/30/9/093004.Export: BibTex EndNote
      Citation:
      Tian Mi, Xiu Xiangqian, Zhang Rong, Hua Xuemei, Liu Zhanhui, Han Ping, Xie Zili, Zheng Youdou. Analysis of the anisotropy in an m-plane GaN film via HVPE on a-LiAlO2 substrate[J]. Journal of Semiconductors, 2009, 30(9): 093004. doi: 10.1088/1674-4926/30/9/093004

      Tian M, Xiu X Q, Zhang R, Hua X M, Liu Z H, Han P, Xie Z L, Zheng Y D. Analysis of the anisotropy in an m-plane GaN film via HVPE on a-LiAlO2 substrate[J]. J. Semicond., 2009, 30(9): 093004. doi: 10.1088/1674-4926/30/9/093004.
      Export: BibTex EndNote

      Analysis of the anisotropy in an m-plane GaN film via HVPE on a-LiAlO2 substrate

      doi: 10.1088/1674-4926/30/9/093004
      • Received Date: 2015-08-18
      • Accepted Date: 2009-03-20
      • Revised Date: 2009-04-30
      • Published Date: 2009-08-28

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return