Chin. J. Semicond. > 2006, Volume 27 > Issue 8 > 1406-1411

PAPERS

Properties of CIGS Thin-Films Prepared by a Three-Stage of Co-Evaporation Process

Ao Jianping, Sun Yun, Wang Xiaoling, Li Fengyan, He Qing, Sun Guozhong, Zhou Zhiqiang and Li Changjian

+ Author Affiliations

PDF

Abstract: CIGS thin films are deposited in a three-stage co-evaporation process by using a simple PID controller.The composition of the CIGS thin films can be controlled on-line by monitoring the temperature change of the substrates while using constant power to heat the substrates.These methods can greatly improve the controllability and reproducibility of depositing CIGS thin films.The surfaces of the CIGS films are smooth, with a roughness less than 10nm. However,the preferential orientations of the CIGS thin films with the same component are different,though most of them are (112).Moreover,the grain sizes of the CIGS thin films are also very different.Although the CIGS films have Cu-poor compositions,Cu/(In+Ga)<1,most of them are p-type semiconductors, and a few are n-type,as determined by Hall measurement.

Key words: co-evaporationCu(In,Ga)Se2three-stage processthin film solar cells

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 3069 Times PDF downloads: 3061 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 August 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Ao Jianping, Sun Yun, Wang Xiaoling, Li Fengyan, He Qing, Sun Guozhong, Zhou Zhiqiang, Li Changjian. Properties of CIGS Thin-Films Prepared by a Three-Stage of Co-Evaporation Process[J]. Journal of Semiconductors, 2006, In Press. Ao J P, Sun Y, Wang X L, Li F Y, He Q, Sun G Z, Zhou Z Q, Li C J. Properties of CIGS Thin-Films Prepared by a Three-Stage of Co-Evaporation Process[J]. Chin. J. Semicond., 2006, 27(8): 1406.Export: BibTex EndNote
      Citation:
      Ao Jianping, Sun Yun, Wang Xiaoling, Li Fengyan, He Qing, Sun Guozhong, Zhou Zhiqiang, Li Changjian. Properties of CIGS Thin-Films Prepared by a Three-Stage of Co-Evaporation Process[J]. Journal of Semiconductors, 2006, In Press.

      Ao J P, Sun Y, Wang X L, Li F Y, He Q, Sun G Z, Zhou Z Q, Li C J. Properties of CIGS Thin-Films Prepared by a Three-Stage of Co-Evaporation Process[J]. Chin. J. Semicond., 2006, 27(8): 1406.
      Export: BibTex EndNote

      Properties of CIGS Thin-Films Prepared by a Three-Stage of Co-Evaporation Process

      • Received Date: 2015-08-20

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return