| Citation: |
Cheng Buwen, Yao Fei, Xue Chunlai, Zhang Jianguo, Li Chuanbo, Mao Rongwei, Zuo Yuhua, Luo Liping, Wang Qiming. Strain Compensation in SiGe by Boron Doping[J]. Journal of Semiconductors, 2005, In Press.
Cheng B W, Yao F, Xue C L, Zhang J G, Li C B, Mao R W, Zuo Y H, Luo L P, Wang Q M. Strain Compensation in SiGe by Boron Doping[J]. Chin. J. Semicond., 2005, 26(13): 39.
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Strain Compensation in SiGe by Boron Doping
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Abstract
Strained SiGe alloy doped with different boron concentrations is grown by UHV/CVD(ultra-high vacuum chemical vapor deposition).Strain compensation of B in SiGe is studied.The compensation ratio of B to Ge is 7.3.The lattice-contraction coefficient of B in Si,6.23e-24cm3/atom,is obtained.-
Keywords:
- SiGe,
- strain compensation,
- doping
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References
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Proportional views
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