Chin. J. Semicond. > 2001, Volume 22 > Issue 7 > 846-852
|

CONTENTS

在InGaAsP/InP双异质结构中的光弹效应及其对侧向光的限制作用

邢启江 , 徐万劲 and 武作兵

+ Author Affiliations

PDF

Key words: WNi/半导体接触, 光弹效应, InGaAsP/InP双异质结构, 平面型波导器件

    • Search

    Advanced Search >>

    Article Metrics

    Article views: 2376 Times PDF downloads: 958 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 July 2001

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2001  >  22(7): 846-852
      Export: BibTex EndNote
      Citation:


      Export: BibTex EndNote
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return