Chin. J. Semicond. > 2001, Volume 22 > Issue 10 > 1320-1324

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Key words: PD SOI NMOSFET, 翘曲效应, 温度解析模型, 动态平衡

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2001

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      • Received Date: 2015-08-20

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