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(a) The cross-sectional schematic diagram of the InP-based HEMT. (b) The cross-sectional schematic diagram of the cap layer.
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Qing Wang, Peng Ding, Yongbo Su, Wuchang Ding, Muhammad Asif, Wu Tang, Zhi Jin. fT=260 GHz and fmax=607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mm[J]. Journal of Semiconductors, 2016, 37(7): 074003. doi: 10.1088/1674-4926/37/7/074003
Q Wang, P Ding, Y B Su, W C Ding, M Asif, W Tang, Z Jin. fT=260 GHz and fmax=607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mm[J]. J. Semicond., 2016, 37(7): 074003. doi: 10.1088/1674-4926/37/7/074003.
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fT=260 GHz and fmax=607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mm
doi: 10.1088/1674-4926/37/7/074003
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Abstract
The 100-nm T-gate InP-based InAlAs/InGaAs high electron mobility transistors (HEMTs) with the width of 2×50 μm and source-drain space of 2.4 μm are systematically investigated. High indium (In) composition of InGaAs layer was adopted to acquire the higher mobility of the channel layer. A sandwich structure was adopted to optimize the cap layers and produce a very low contact resistance. The fabricated devices exhibit extrinsic maximum transconductance Gm.max=1441 mS/mm, cutoff frequency fT=260 GHz, and maximum oscillation frequency fmax=607 GHz. A semi-empirical model has been developed to precisely fit the low-frequency region of scattering parameters (S parameters) for InP-based HEMTs. Excellent agreement between measured and simulated S parameters demonstrates the validity of this approach. -
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