| Citation: |
He Guorong, Yang Guohua, Zheng Wanhua, Wu Xuming, Wang Xiaodong, Cao Yulian, Wang Qing, Chen Lianghui. Analysis of Si/GaAs Bonding Stresses with the FiniteElement Method[J]. Journal of Semiconductors, 2006, In Press.
He G R, Yang G H, Zheng W H, Wu X M, Wang X D, Cao Y L, Wang Q, Chen L H. Analysis of Si/GaAs Bonding Stresses with the FiniteElement Method[J]. Chin. J. Semicond., 2006, 27(11): 1906.
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Analysis of Si/GaAs Bonding Stresses with the FiniteElement Method
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Abstract
In conjunction with ANSYS,we use the finite element method to analyze the bonding stresses of Si/GaAs.We also apply a numerical model to investigate a contour map and the distribution of normal stress,shearing stress,and peeling stress,taking into full consideration the thermal expansion coefficient as a function of temperature.Novel bonding structures are proposed for reducing the effect of thermal stress as compared with conventional structures.Calculations show the validity of this new structure.-
Keywords:
- bonding,
- thermal stress,
- finite element analysis
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References
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