SEMICONDUCTOR DEVICES

Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices

Yehua Chen1, 2, Xia An2, , Weikang Wu2, Yao Zhang3, Jingjing Liu3, Xing Zhang2 and Ru Huang2,

+ Author Affiliations

 Corresponding author: An Xia, Email: xia.an@pku.edu.cn;; Huang Ru, Email: ruhuang@pku.edu.cn

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Abstract: The radiation response of 90 nm bulk silicon MOS devices after heavy ion irradiation is experimentally investigated. Due to the random strike of the incident particle, different degradation behaviors of bulk silicon MOS devices are observed. The drain current and maximum transconductance degrade as a result of the displacement damage in the channel induced by heavy ion strike. The off-state leakage current degradation and threshold voltage shift are also observed after heavy ion irradiation. The results suggest that the radiation induced damage of sub-100 nm MOS devices caused by heavy ion irradiation should be paid attention.

Key words: heavy iondisplacement damagebulk silicon



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Fig. 1.  The transfer characteristics of 0.5 $\mu$m/0.1 $\mu$m device before and after irradiation.

Fig. 2.  The output characteristics of 0.5 $\mu$m/0.1 $\mu$m device before and after irradiation.

Fig. 3.  The $g_{\rm m}$--$V_{\rm G}$ curves of 0.5 $\mu$m/0.1 $\mu$m device before and after irradiation measured at $V_{\rm D}$ $=$ 0.1 V and $V_{\rm D}$ $=$ 1.2 V.

Fig. 4.  The transfer characteristics of 0.5 $\mu$m/0.1 $\mu$m device before and after irradiation.

Fig. 5.  The output characteristics of 0.5 $\mu$m/0.1 $\mu$m device before and after irradiation.

Fig. 6.  The $g_{\rm m}$--$V_{\rm G}$ curves of 0.5 $\mu$m/0.1 $\mu$m device before and after irradiation.

Fig. 7.  The transfer characteristics of 0.5 $\mu$m/0.1 $\mu$m device before and after irradiation.

Fig. 8.  The output characteristics of 0.5 $\mu$m/0.1 $\mu$m device before and after irradiation.

Fig. 9.  The transfer characteristics of 0.12 $\mu$m/0.1 $\mu$m device before and after irradiation.

Fig. 10.  The output characteristics of 0.12 $\mu$m/0.1 $\mu$m device before and after irradiation.

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    Received: 11 June 2015 Revised: Online: Published: 01 November 2015

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      Yehua Chen, Xia An, Weikang Wu, Yao Zhang, Jingjing Liu, Xing Zhang, Ru Huang. Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices[J]. Journal of Semiconductors, 2015, 36(11): 114002. doi: 10.1088/1674-4926/36/11/114002 Y H Chen, X An, W K Wu, Y Zhang, J J Liu, X Zhang, R Huang. Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices[J]. J. Semicond., 2015, 36(11): 114002. doi: 10.1088/1674-4926/36/11/114002.Export: BibTex EndNote
      Citation:
      Yehua Chen, Xia An, Weikang Wu, Yao Zhang, Jingjing Liu, Xing Zhang, Ru Huang. Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices[J]. Journal of Semiconductors, 2015, 36(11): 114002. doi: 10.1088/1674-4926/36/11/114002

      Y H Chen, X An, W K Wu, Y Zhang, J J Liu, X Zhang, R Huang. Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices[J]. J. Semicond., 2015, 36(11): 114002. doi: 10.1088/1674-4926/36/11/114002.
      Export: BibTex EndNote

      Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices

      doi: 10.1088/1674-4926/36/11/114002
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      Project supported by the State Key Development Program for Basic Research of China (No. 2011CBA00601), the National Natural Science Foundation of China (Nos. 61421005, 61434007, 60806033, 61474004), the SRFDP (No. 20130001110025), and the National S&T Major Project 02.

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