SEMICONDUCTOR DEVICES

Voltage reduction of 808 nm GaAsP/(Al)GaInP laser diodes with GaInAsP intermediate layer

Zhen Zhu1, 2, , Xin Zhang2, Peixu Li2, Gang Wang1 and Xiangang Xu2, 3

+ Author Affiliations

 Corresponding author: Zhen Zhu, E-mail: zhuzhen2003@163.com

PDF

Abstract: GaInAsP layers and GaAsP/ (Al) GaInP laser diodes (LDs) have been grown on GaAs substrates by metalorganic chemical vapor deposition. The GaInAsP layer, which is lattice matched to GaAs, has an intermediate band gap between Ga0.5In0.5P and GaAs. The GaInP/GaAs heterojunction spikes, especially in the valence band, can be suppressed by introducing this thin GaInAsP layer into the heterostructure interface. The 808 nm GaAsP/ (Al) GaInP LDs with GaInAsP intermediate layer show a reduced operating voltage compared to the conventional LDs with abrupt GaInP/GaAs interface due to the enhanced hole injection. As a result, the power conversion efficiency is improved from 52% to 60% at 350 mW output power. At high current injection, the LD with GaInAsP intermediate layer has higher light power owing to the decreased joule heating.

Key words: MOCVDGaInAsP layerheterojunctionvoltage reduction



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
Fig. 1.  Schematic structure of LDs for samples A and B.

Fig. 2.  XRD profile of GaInAsP layer grown on GaAs substrate.

Fig. 3.  PL spectrum of GaInAsP layer grown on GaAs substrate.

Fig. 4.  $I$-$V$ characteristics of LDs for samples A and B. The inset shows $I$-$V$ curves on the log scale.

Fig. 5.  Light output power and calculated power conversion efficiency of LDs for samples A and B.

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2783 Times PDF downloads: 36 Times Cited by: 0 Times

    History

    Received: 19 June 2014 Revised: Online: Published: 01 January 2015

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Zhen Zhu, Xin Zhang, Peixu Li, Gang Wang, Xiangang Xu. Voltage reduction of 808 nm GaAsP/(Al)GaInP laser diodes with GaInAsP intermediate layer[J]. Journal of Semiconductors, 2015, 36(1): 014011. doi: 10.1088/1674-4926/36/1/014011 Z Zhu, X Zhang, P X Li, G Wang, X G Xu. Voltage reduction of 808 nm GaAsP/(Al)GaInP laser diodes with GaInAsP intermediate layer[J]. J. Semicond., 2015, 36(1): 014011. doi: 10.1088/1674-4926/36/1/014011.Export: BibTex EndNote
      Citation:
      Zhen Zhu, Xin Zhang, Peixu Li, Gang Wang, Xiangang Xu. Voltage reduction of 808 nm GaAsP/(Al)GaInP laser diodes with GaInAsP intermediate layer[J]. Journal of Semiconductors, 2015, 36(1): 014011. doi: 10.1088/1674-4926/36/1/014011

      Z Zhu, X Zhang, P X Li, G Wang, X G Xu. Voltage reduction of 808 nm GaAsP/(Al)GaInP laser diodes with GaInAsP intermediate layer[J]. J. Semicond., 2015, 36(1): 014011. doi: 10.1088/1674-4926/36/1/014011.
      Export: BibTex EndNote

      Voltage reduction of 808 nm GaAsP/(Al)GaInP laser diodes with GaInAsP intermediate layer

      doi: 10.1088/1674-4926/36/1/014011
      Funds:

      Project supported by the National Key Basic Research Program of China (No. 2013CB632801).

      More Information
      • Corresponding author: E-mail: zhuzhen2003@163.com
      • Received Date: 2014-06-19
      • Accepted Date: 2014-07-27
      • Published Date: 2015-01-25

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return