SEMICONDUCTOR INTEGRATED CIRCUITS

Analysis and RHBD technique of single event transients in PLLs

Zhiwei Han1, , Liang Wang1, , Suge Yue1, 2, Bing Han1 and Shougang Du1

+ Author Affiliations

 Corresponding author: Han Zhiwei, Email: h_zh_wei@163.com; Wang Liang, Email: wangliang150200@163.com; Han Zhiwei, Email: h_zh_wei@163.com; Wang Liang, Email: wangliang150200@163.com

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Abstract: Single-event transient susceptibility of phase-locked loops has been investigated. The charge pump is the most sensitive component of the PLL to SET, and it is hard to mitigate this effect at the transistor level. A test circuit was designed on a 65 nm process using a new system-level radiation-hardening-by-design technique. Heavy-ion testing was used to evaluate the radiation hardness. Analyses and discussion of the feasibility of this method are also presented.

Key words: phase locked loop (PLL)radiation effectsingle-event transient (SET)radiation-hardening-by-design (RHBD)



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Fig. 1.  Block diagram of a typical PLL circuit.

Fig. 2.  The sensitive node of CP in a PLL.

Fig. 3.  An SET changes the $V_{\rm ctrl}$,and in turn makes a PLL lose lock.

Fig. 4.  The structure of the dual-redundancy switching PLL.

Fig. 5.  The structure of a clock switch logic.

Fig. 6.  The simulation results of the clock switch logic block.

Fig. 7.  The SET-induced error monitored by oscilloscope. (a) The waveform monitored by oscilloscope. (b) The waveform that FOUT changes to FOUT2. (c) The waveform that FOUT changes to FOUT1.

Table 1.   SET test results of the DRS PLL.

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    Received: 11 June 2015 Revised: Online: Published: 01 November 2015

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      Zhiwei Han, Liang Wang, Suge Yue, Bing Han, Shougang Du. Analysis and RHBD technique of single event transients in PLLs[J]. Journal of Semiconductors, 2015, 36(11): 115001. doi: 10.1088/1674-4926/36/11/115001 Z W Han, L Wang, S G Yue, B Han, S G Du. Analysis and RHBD technique of single event transients in PLLs[J]. J. Semicond., 2015, 36(11): 115001. doi: 10.1088/1674-4926/36/11/115001.Export: BibTex EndNote
      Citation:
      Zhiwei Han, Liang Wang, Suge Yue, Bing Han, Shougang Du. Analysis and RHBD technique of single event transients in PLLs[J]. Journal of Semiconductors, 2015, 36(11): 115001. doi: 10.1088/1674-4926/36/11/115001

      Z W Han, L Wang, S G Yue, B Han, S G Du. Analysis and RHBD technique of single event transients in PLLs[J]. J. Semicond., 2015, 36(11): 115001. doi: 10.1088/1674-4926/36/11/115001.
      Export: BibTex EndNote

      Analysis and RHBD technique of single event transients in PLLs

      doi: 10.1088/1674-4926/36/11/115001
      More Information
      • Corresponding author: Han Zhiwei, Email: h_zh_wei@163.com; Wang Liang, Email: wangliang150200@163.com; Han Zhiwei, Email: h_zh_wei@163.com; Wang Liang, Email: wangliang150200@163.com
      • Received Date: 2015-06-11
      • Accepted Date: 2015-07-23
      • Published Date: 2015-01-25

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