J. Semicond. > 2015, Volume 36 > Issue 5 > 054004, doi: 10.1088/1674-4926/36/5/054004
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SEMICONDUCTOR DEVICES

MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application

Jiahui Zhou1, 2, Hudong Chang2, Honggang Liu2, Guiming Liu2, Wenjun Xu1, Qi Li1, 3, Simin Li1, Zhiyi He1 and Haiou Li1,

+ Author Affiliations

 Corresponding author: Haiou Li, E-mail: seagull 1228@163.com

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Abstract: The impact of various thicknesses of Al2O3 metal-insulator-metal (MIM) capacitors on direct current and radio frequency (RF) characteristics is investigated. For 20 nm Al2O3, the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm2 and acceptable voltage coefficients of capacitance of 681 ppm/V2 at 1 MHz. An outstanding VCC-α of 74 ppm/V2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al2O3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al2O3 could be very promising candidates for GaAs RFIC applications.

Key words: MIM capacitors, Al2O3, thickness



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Fig. 1.  SEM of a MIM capacitor.

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Fig. 2.  Capacitance densities and loss tangent for MIM capacitors of various thicknesses.

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Fig. 3.  (a) DC bias dependence of normalized capacitance ($\Delta C/C_{0})$ at 1 MHz for 20, 30, 50 and 100 nm MIM capacitors. (b) The extracted $\alpha $ and $\beta$ for different thicknesses.

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Fig. 4.  The equivalent circuit model of MIM capacitor at RF regime.

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Fig. 5.  (Color online) Measured (red circles) and simulated (blue lines) $S$-parameter ($S_{11}$ and $S_{21})$ for MIM capacitors with different dielectric thicknesses. (a) 20 nm. (b) 30 nm. (c) 50 nm. (d) 100 nm

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Fig. 6.  Capacitance frequency response and $Q$ factors of different Al$_{2}$O$_{3}$ dielectric thicknesses.

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Table 1.   The equivalent circuits parasitic and intrinsic parameters of various dielectric thicknesses.

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    Received: 24 August 2014 Revised: Online: Published: 01 May 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(5): 054004
      Jiahui Zhou, Hudong Chang, Honggang Liu, Guiming Liu, Wenjun Xu, Qi Li, Simin Li, Zhiyi He, Haiou Li. MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application[J]. Journal of Semiconductors, 2015, 36(5): 054004. doi: 10.1088/1674-4926/36/5/054004 J H Zhou, H D Chang, H G Liu, G M Liu, W J Xu, Q Li, S M Li, Z Y He, H O Li. MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application[J]. J. Semicond., 2015, 36(5): 054004. doi: 10.1088/1674-4926/36/5/054004.Export: BibTex EndNote
      Citation:
      Jiahui Zhou, Hudong Chang, Honggang Liu, Guiming Liu, Wenjun Xu, Qi Li, Simin Li, Zhiyi He, Haiou Li. MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application[J]. Journal of Semiconductors, 2015, 36(5): 054004. doi: 10.1088/1674-4926/36/5/054004

      J H Zhou, H D Chang, H G Liu, G M Liu, W J Xu, Q Li, S M Li, Z Y He, H O Li. MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application[J]. J. Semicond., 2015, 36(5): 054004. doi: 10.1088/1674-4926/36/5/054004.
      Export: BibTex EndNote
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      MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application

      doi: 10.1088/1674-4926/36/5/054004
      • 1.

        Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China

      • 2.

        Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • 3.

        State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      Funds:

      Project supported by the National Natural Science Foundation of China (Nos.61274077, 61474031), the Guangxi Natural Science Foundation (No.2013GXNSFGA019003), the Guangxi Department of Education Project (No.201202ZD041), the Guilin City Technology Bureau (Nos.20120104-8, 20130107-4), the China Postdoctoral Science Foundation Funded Project (Nos.2012M521127, 2013T60566), the National Basic Research Program of China (Nos.2011CBA00605, 2010CB327501), the Innovation Project of GUET Graduate Education (Nos.GDYCSZ201448, GDYCSZ201449), the State Key Laboratory of Electronic Thin Films and Integrated Devices, UESTC (No.KFJJ201205), and the Guilin City Science and Technology Development Project (Nos.20130107-4, 20120104-8).

      More Information
      • Corresponding author: E-mail: seagull 1228@163.com
      • Received Date: 2014-08-24
      • Accepted Date: 2014-12-30
      • Published Date: 2015-01-25

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