SEMICONDUCTOR DEVICES

The effects of drain scatterings on the electron transport properties of strained-Si diodes with ballistic and non-ballistic channels

Yasenjan Ghupur1, 2, Mamtimin Geni1, Mamatrishat Mamat2 and Abudukelimu Abudureheman3

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 Corresponding author: Mamtimin Geni, E-mail: mgeni@126.net

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Abstract: The effects of multiple scattering on the electron transport properties in drain regions are numerically investigated for the cases of strained-Si diodes with or without scattering in the channel. The performance of non-ballistic (with scattering) channel Si-diodes is compared with that of ballistic (without scattering) channel Si-diodes, using the strain and scattering model. Our results show that the values of the electron velocity and the current in the strain model are higher than the respective values in the unstrained model, and the values of the velocity and the current in the ballistic channel model are higher than the respective values in the non-ballistic channel model. In the strain and scattering models, the effect of each carrier scattering mechanism on the performance of the Si-diodes is analyzed in the drain region. For the ballistic channel model, our results show that inter-valley optical phonon scattering improves device performance, whereas intra-valley acoustic phonon scattering degrades device performance. For the strain model, our results imply that the larger energy splitting of the strained Si could suppress the inter-valley phonon scattering rate. In conclusion, for the drain region, investigation of the strained-Si and scattering mechanisms are necessary, in order to improve the performance of nanoscale ballistic regime devices.

Key words: strain, scatteringballistic channelSi-diodeMonte Carlo simulation



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Fig. 1.  Schematic figure of n$^+$-i-n$^+$ diode.

Fig. 2.  (a)-(c) A comparison of the mean electron velocity, current and electron energy ratios of ballistic channel strained-Si diodes, for selected $x$.

Fig. 3.  (a)-(c) The distribution of the electron velocity, electric field and electron density along the diode $x$-axis direction, for ballistic and non-ballistic channel strained-Si diodes. $V_{\rm d}$ $=$ 0.4 V, $x=$ 0.4.

Fig. 4.  The values and ratios of electron velocity (a, d), current (b, e) and electron energy (c, f) of the model of strain (Table 1) for $x$ $=$ 0.4.

Fig. 5.  Comparisons of the electron velocity (a-c) and electron energy (d-f) in the drain region from the models of scattering (Table 2) in the drain regions, for the cases ch & dr (a, d), dr (b, e) and ch (c, f). The range of $V_{\rm d}$ changes from 0.2 to 1 V, and $x$ $=$ 0.4.

Table 1.   Model of strain.

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Table 2.   Model of scattering mechanisms.

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    Received: 22 August 2014 Revised: Online: Published: 01 April 2015

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      Yasenjan Ghupur, Mamtimin Geni, Mamatrishat Mamat, Abudukelimu Abudureheman. The effects of drain scatterings on the electron transport properties of strained-Si diodes with ballistic and non-ballistic channels[J]. Journal of Semiconductors, 2015, 36(4): 044004. doi: 10.1088/1674-4926/36/4/044004 Y Ghupur, M Geni, M Mamat, A Abudureheman. The effects of drain scatterings on the electron transport properties of strained-Si diodes with ballistic and non-ballistic channels[J]. J. Semicond., 2015, 36(4): 044004. doi:  10.1088/1674-4926/36/4/044004.Export: BibTex EndNote
      Citation:
      Yasenjan Ghupur, Mamtimin Geni, Mamatrishat Mamat, Abudukelimu Abudureheman. The effects of drain scatterings on the electron transport properties of strained-Si diodes with ballistic and non-ballistic channels[J]. Journal of Semiconductors, 2015, 36(4): 044004. doi: 10.1088/1674-4926/36/4/044004

      Y Ghupur, M Geni, M Mamat, A Abudureheman. The effects of drain scatterings on the electron transport properties of strained-Si diodes with ballistic and non-ballistic channels[J]. J. Semicond., 2015, 36(4): 044004. doi:  10.1088/1674-4926/36/4/044004.
      Export: BibTex EndNote

      The effects of drain scatterings on the electron transport properties of strained-Si diodes with ballistic and non-ballistic channels

      doi: 10.1088/1674-4926/36/4/044004
      Funds:

      Project supported by the National Natural Science Foundation of China (No. 61366001) and the National Basic Research Program of China (No. 2011CB706601).

      More Information
      • Corresponding author: E-mail: mgeni@126.net
      • Received Date: 2014-08-22
      • Accepted Date: 2014-10-19
      • Published Date: 2015-01-25

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