Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 571-575
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808nm大功率半导体激光器腔面光学膜工艺

舒雄文 , 徐晨 , 徐遵图 , 朱彦旭 and 沈光地

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Abstract: 用电子束蒸发离子辅助镀膜方法为808nm大功率半导体激光器镀制了SiO2/TiO2高反膜及SiO2或Al2O3减反膜，结果表明镀膜后激光器外微分量子效率明显提高(由0.7提高到1.24)，而且可在一定范围内调节阈值电流密度，器件寿命也有很大提高．对这种方法所镀制的SiO2/TiO2膜用作808nm半导体激光器高反膜的可行性进行了分析和探讨，认为是一种可行的方法．

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(3): 571-575
      808nm大功率半导体激光器腔面光学膜工艺[J]. Journal of Semiconductors, 2005, In Press. 808nm大功率半导体激光器腔面光学膜工艺[J]. Chin. J. Semicond., 2005, 26(3): 571.Export: BibTex EndNote
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      808nm大功率半导体激光器腔面光学膜工艺[J]. Journal of Semiconductors, 2005, In Press.

      808nm大功率半导体激光器腔面光学膜工艺[J]. Chin. J. Semicond., 2005, 26(3): 571.
      Export: BibTex EndNote
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      808nm大功率半导体激光器腔面光学膜工艺

      • Received Date: 2015-08-19

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