Chin. J. Semicond. > 2005, Volume 26 > Issue 7 > 1469-1474
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HCl/HF/CrO3溶液对InGaAs/InGaAsP的选择性湿法刻蚀——应用于楔形结构的制备

黄辉 , 王兴妍 , 任晓敏 , 王琦 , 黄永清 , 高俊华 and 马晓宇

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Key words: 动态掩膜湿法腐蚀, 选择性腐蚀, 化学湿法腐蚀, 楔形结构, InGaAsP

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    Received: 18 August 2015 Revised: Online: Published: 01 July 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(7): 1469-1474
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      • Received Date: 2015-08-18

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