J. Semicond. > 2018, Volume 39 > Issue 12 > 124001, doi: 10.1088/1674-4926/39/12/124001
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SEMICONDUCTOR DEVICES

Electrical contacts to two-dimensional transition-metal dichalcogenides

Shuxian Wang1, Zhihao Yu2, and Xinran Wang2

+ Author Affiliations

 Corresponding author: Zhihao Yu, zhihao@nju.edu.cn

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Abstract: Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have attracted enormous interests as the novel channel materials for atomically thin transistors. Despite considerable progress in recent years, the transistor performance is largely limited by the excessive contact resistance at the source/drain interface. In this review, a summary of recent progress on improving electrical contact to TMDC transistors is presented. Several important strategies including topology of contacts, choice of metals and interface engineering are discussed.

Key words: two-dimension, channel materials, Fin-FET



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Fig. 1.  (Color online) Typical structure of field-effect transistors.

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Fig. 2.  (Color online) Interface geometries of metal-2D contacts: (a) Top-contact configuration, (b) Edge-contact configuration[30].

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Fig. 3.  (Color online) Contact interface between MoS2 and the (a) Au(111) and (b) Ti(0001) surface, (c) Binding energy E per interface metal atom as a function of the separation d between MoS2 and the Ti(0001) and Au(111) surface[53].

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Fig. 4.  (Color online) Schematic of Cl-doped few-layer WS2 back-gate FET and the binding energies of core levels in WS2 with and without the DCE treatment[60].

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Fig. 5.  (Color online) Device schematics and characterization of a bottom gated FET with Au deposited directly on (a) the 2H phase MoS2, and (b) the patterned 1T phase MoS2[66].

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Fig. 6.  (Color online) (a) Schematic cross-sectional views of the typical metal/insertion-MoS2 sandwich interface. (b) Contact resistivity as function of Ta2O5 thickness[65].

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Fig. 7.  (Color online) Planar 2D transistor based on van der Waals vertical contacts: (a) coplanar contacts, (b) staggered contacts and (c) hybrid contacts[85].

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Fig. 8.  (Color online) Illustration and structural characterizations of vdW meta–semiconductor junctions[89].

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[1]
Lange K, Müller-Seitz G, Sydow J, et al. Financing innovations in uncertain networks—filling in roadmap gaps in the semiconductor industry. Research Policy, 2013, 42(3): 647 doi: 10.1016/j.respol.2012.12.001
[2]
Liu Q, Vinet M, Gimbert J, et al. High performance UTBB FDSOI devices featuring 20 nm gate length for 14 nm node and beyond. IEEE International Electron Devices Meeting, 2013: 9.2.1
[3]
Mistry K, Allen C, Auth C, et al. A 45 nm logic technology with high-k+ metal gate transistors, strained silicon, 9 Cu interconnect layers, 193 nm dry patterning, and 100% Pb-free packaging. IEEE International Electron Devices Meeting, 2007
[4]
Welser J, Hoyt J L, Takagi S, et al. Strain dependence of the performance enhancement in strained-Si n-MOSFETs. Proceedings of 1994 IEEE International Electron Devices Meeting, 1994
[5]
Welser J, Hoyt J L, Gibbons J F. Electron mobility enhancement in strained-Si n-type metal–oxide–semiconductor field-effect transistors. IEEE Electron Device Lett, 1994, 15(3): 100 doi: 10.1109/55.285389
[6]
Auth C, Allen C, Blattner A, et al. A 22 nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors. 2012 Symposium on VLSI Technology (VLSIT), 2012
[7]
Fried D M, Nowak E J, Rainey B A, et al. Fin FET devices from bulk semiconductor and method for forming. Google Patents, 2003
[8]
Yu B, Wann C H, Nowak E D, et al. Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's. IEEE Trans Electron Devices, 1997, 44(4): 627 doi: 10.1109/16.563368
[9]
Wilson L. International technology roadmap for semiconductors (ITRS). Semiconductor Industry Association. 2013.
[10]
Novoselov K S, Geim A K, Morozov S V, et al. Electric field effect in atomically thin carbon films. Science, 2004, 306(5696): 666 doi: 10.1126/science.1102896
[11]
Li X, Wang X, Zhang L, et al. Chemically derived, ultrasmooth graphene nanoribbon semiconductors. Science, 2008, 319(5867): 1229 doi: 10.1126/science.1150878
[12]
Lu C L, Chang C, Huang Y, et al. Influence of an electric field on the optical properties of few-layer graphene with AB stacking. Phys Rev B, 2006, 73(14): 144427 doi: 10.1103/PhysRevB.73.144427
[13]
Zhang Y, Tang T, Girit C, et al. Direct observation of a widely tunable bandgap in bilayer graphene. Nature, 2009, 459(7248): 820 doi: 10.1038/nature08105
[14]
Elias D C, Nair R R, Mohiuddin T, et al. Control of graphene's properties by reversible hydrogenation: evidence for graphane. Science, 2009, 323(5914): 610 doi: 10.1126/science.1167130
[15]
Jariwala D, Sangwan V K, Lauhon L J, et al. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. ACS Nano, 2014, 8(2): 1102 doi: 10.1021/nn500064s
[16]
Lieth R, Terhell J. Transition metal dichalcogenides. In: Preparation and crystal growth of materials with layered structures. Springer, 1977: 141
[17]
Wang Q H, Kalantar-Zadeh K, Kis A, et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol, 2012, 7(11): 699 doi: 10.1038/nnano.2012.193
[18]
Radisavljevic B, Radenovic A, Brivio J, et al. Single-layer MoS2 transistors. Nat Nanotechnol, 2011, 6(3): 147 doi: 10.1038/nnano.2010.279
[19]
Wang Y, Li L, Yao W, et al. Monolayer PtSe2, a new semiconducting transition-metal-dichalcogenide, epitaxially grown by direct selenization of Pt. Nano Lett, 2015, 15(6): 4013 doi: 10.1021/acs.nanolett.5b00964
[20]
Zhao Y, Qiao J, Yu Z, et al. High‐electron‐mobility and air‐stable 2D layered PtSe2 FETs. Adv Mater, 2017, 29(5): 1604230 doi: 10.1002/adma.201604230
[21]
Li H, Zhang Q, Yap C C R, et al. From bulk to monolayer MoS2: evolution of Raman scattering. Adv Funct Mater, 2012, 22(7): 1385 doi: 10.1002/adfm.v22.7
[22]
Liu E, Fu Y, Wang Y, et al. Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors. Nat Commun, 2015, 6: 6991 doi: 10.1038/ncomms7991
[23]
Wang Y, Liu E, Liu H, et al. Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2. Nat Commun, 2016, 7: 13142 doi: 10.1038/ncomms13142
[24]
Yu Y, Yang F, Lu X F, et al. Gate-tunable phase transitions in thin flakes of 1T-TaS2. Nat Nanotechnol, 2015, 10(3): 270 doi: 10.1038/nnano.2014.323
[25]
Mak K F, Mcgill K L, Park J, et al. The valley Hall effect in MoS2 transistors. Science, 2014, 344(6191): 1489 doi: 10.1126/science.1250140
[26]
Lee C, Lee G, Van Der Zande A M, et al. Atomically thin p–n junctions with van der Waals heterointerfaces. Nat Nanotechnol, 2014, 9(9): 676 doi: 10.1038/nnano.2014.150
[27]
Deng Y, Luo Z, Conrad N J, et al. Black phosphorus–monolayer MoS2 van der Waals heterojunction p–n diode. ACS Nano, 2014, 8(8): 8292 doi: 10.1021/nn5027388
[28]
Fang H, Battaglia C, Carraro C, et al. Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides. Proceedings of the National Academy of Sciences, 2014, 111(17): 6198 doi: 10.1073/pnas.1405435111
[29]
Geim A K, Grigorieva I V. Van der Waals heterostructures. Nature, 2013, 499(7459): 419 doi: 10.1038/nature12385
[30]
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    Received: 27 August 2018 Revised: 18 September 2018 Online: Uncorrected proof: 12 October 2018Accepted Manuscript: 12 October 2018Corrected proof: 01 November 2018Published: 13 December 2018

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      Article Navigation >  Journal of Semiconductors  > 2018  >  39(12): 124001
      Shuxian Wang, Zhihao Yu, Xinran Wang. Electrical contacts to two-dimensional transition-metal dichalcogenides[J]. Journal of Semiconductors, 2018, 39(12): 124001. doi: 10.1088/1674-4926/39/12/124001 S X Wang, Z H Yu, X R Wang, Electrical contacts to two-dimensional transition-metal dichalcogenides[J]. J. Semicond., 2018, 39(12): 124001. doi: 10.1088/1674-4926/39/12/124001.Export: BibTex EndNote
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      Shuxian Wang, Zhihao Yu, Xinran Wang. Electrical contacts to two-dimensional transition-metal dichalcogenides[J]. Journal of Semiconductors, 2018, 39(12): 124001. doi: 10.1088/1674-4926/39/12/124001

      S X Wang, Z H Yu, X R Wang, Electrical contacts to two-dimensional transition-metal dichalcogenides[J]. J. Semicond., 2018, 39(12): 124001. doi: 10.1088/1674-4926/39/12/124001.
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      Electrical contacts to two-dimensional transition-metal dichalcogenides

      doi: 10.1088/1674-4926/39/12/124001
      • 1.

        Kansas Academy of Mathematics and Science, Fort Hays State University, 600 Park Street, Hays, Kansas 67601-4099, USA

      • 2.

        National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborate Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

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      • Corresponding author: zhihao@nju.edu.cn
      • Received Date: 2018-08-27
      • Revised Date: 2018-09-18
      • Published Date: 2018-12-01

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