SEMICONDUCTOR TECHNOLOGY

Two-step Ni silicide process and influence of protective N2 gas

Shang Haiping and Xu Qiuxia

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Abstract: A two-step process of Ni silicide formed on bulk silicon, and the effects of different process conditions, including two-step RTA temperature and time, selective etching, and process protective nitrogen gas on the properties of the Ni silicide film have been studied. In particular, the experiments show that the quality of NiSi film is very sensitive to the process conditions of the first RTA. The experiments also show that the quality of the film is very sensitive to the flow of protective nitrogen gas. The corresponding mechanisms are discussed.

Key words: NiSi

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    Received: 18 August 2015 Revised: 10 April 2009 Online: Published: 01 September 2009

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      Shang Haiping, Xu Qiuxia. Two-step Ni silicide process and influence of protective N2 gas[J]. Journal of Semiconductors, 2009, 30(9): 096002. doi: 10.1088/1674-4926/30/9/096002 Shang H P, Xu Q X. Two-step Ni silicide process and influence of protective N2 gas[J]. J. Semicond., 2009, 30(9): 096002. doi: 10.1088/1674-4926/30/9/096002.Export: BibTex EndNote
      Citation:
      Shang Haiping, Xu Qiuxia. Two-step Ni silicide process and influence of protective N2 gas[J]. Journal of Semiconductors, 2009, 30(9): 096002. doi: 10.1088/1674-4926/30/9/096002

      Shang H P, Xu Q X. Two-step Ni silicide process and influence of protective N2 gas[J]. J. Semicond., 2009, 30(9): 096002. doi: 10.1088/1674-4926/30/9/096002.
      Export: BibTex EndNote

      Two-step Ni silicide process and influence of protective N2 gas

      doi: 10.1088/1674-4926/30/9/096002
      • Received Date: 2015-08-18
      • Accepted Date: 2009-02-11
      • Revised Date: 2009-04-10
      • Published Date: 2009-08-28

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