| Citation: |
Chu Xiuqin, Li Qingwei, Lai Xinquan, Yuan Bing, Li Yanming, Zhao Yongrui. A 3 A sink/source current fast transient response low-dropout Gm driven linear regulator[J]. Journal of Semiconductors, 2011, 32(6): 065002. doi: 10.1088/1674-4926/32/6/065002
Chu X Q, Li Q W, Lai X Q, Yuan B, Li Y M, Zhao Y R. A 3 A sink/source current fast transient response low-dropout Gm driven linear regulator[J]. J. Semicond., 2011, 32(6): 065002. doi: 10.1088/1674-4926/32/6/065002.
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A 3 A sink/source current fast transient response low-dropout Gm driven linear regulator
doi: 10.1088/1674-4926/32/6/065002
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Abstract
A 3 A sink/source Gm-driven CMOS low-dropout regulator (LDO), specially designed for low input voltage and low cost, is presented by utilizing the structure of a current mirror Gm (transconductance) driving technique, which provides high stability as well as a fast load transient response. The proposed LDO was fabricated by a 0.5 μm standard CMOS process, and the die size is as small as 1.0 mm2. The proposed LDO dissipates 220 μA of quiescent current in no-load conditions and is able to deliver up to 3 A of load current. The measured results show that the output voltage can be resumed within 2 μs with a less than 1 mV overshoot and undershoot in the output current step from –1.8 to 1.8 A with a 0.1 μs rising and falling time at three 10 μF ceramic capacitors.-
Keywords:
- sink/source,
- linear regulator,
- load transient response,
- low-dropout
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References
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Proportional views
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