| Citation: |
Tang Jun, Chen Hongda, Liang Kun, Du Yun, Yang Xiaohong, Wu Ronghan. Properties of GaAs Based Resonant Cavity Enhanced Photodetectors[J]. Journal of Semiconductors, 2005, In Press.
Tang J, Chen H D, Liang K, Du Y, Yang X H, Wu R H. Properties of GaAs Based Resonant Cavity Enhanced Photodetectors[J]. Chin. J. Semicond., 2005, 26(13): 243.
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Properties of GaAs Based Resonant Cavity Enhanced Photodetectors
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Abstract
The theoretical analysis and experimental measurement on the incident angle dependence of quantum efficiency of GaAs based resonant cavity enhanced (RCE) photodetector are presented.By changing the angle of incoming light,about 40nm wavelength variation of peak quantum efficiency is obtained.The peak quantum efficiency and optical bandwidth at different mode corresponding to different angle incidence are characterized with different absorption dependence on wavelength. -
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