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Sentaurus® based modeling and simulation for GFET's characteristic for ssDNA immobilization and hybridization

Yunfang Jia and Cheng Ju

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 Corresponding author: Jia Yunfang,Email:

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Abstract: The graphene field effect transistor (GFET) has been widely studied and developed as sensors and functional devices. The first report about GFET sensing simulation on the device level is proposed. The GFET's characteristics, its responding for single strand DNA (ssDNA) and hybridization with the complimentary DNA (cDNA) are simulated based on Sentaurus, a popular CAD tool for electronic devices. The agreement between the simulated blank GFET feature and the reported experimental data suggests the feasibility of the presented simulation method. Then the simulations of ssDNA immobilization on GFET and hybridization with its cDNA are performed, the results are discussed based on the electron transfer (ET) mechanism between DNA and graphene.

Key words: graphene field effect transistorDNAsimulationelectron transferSentaurus



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Fig. 1.  (Color online) Schematics of device structure (a) and four working states (b, c, d, e). The bias voltage of three electrodes are defined in (a). There is no carriers’ accumulation or depletion in (b), the current of Ids is determined by the conductance of the graphene conducting channel itself (G). While in (c) and (d), one type of the carriers is depleted and the other is accumulated depending on the electric potential applied by the gate, where (c) is Vgs < 0 and (d) is Vgs > Vds > 0. Both accumulation and depletion happened when the relation of electric potential among three electrodes is Vds > Vgs > 0 (e).

Fig. 2.  (Color online) (a) Current–voltage characteristic of GFET in a different value of the Vgs. (b) Transfer characteristic of GFET in a different value of the Vds. (c) Comparison between the conductance of the GFET model with experimental data.

Fig. 3.  (Color online) The effects of ssDNA binding on GFET’s transferring characteristics when Vds is constant at (a) 0.2 V, (b) 0.6 V and (c) 1.0 V.

Fig. 4.  (Color online) The effects of immobilizing different concentrations of ssDNA on (a) the variation of GFET’s CNP and (b) the conductance.

Fig. 5.  (Color online) Simulation of transferring characteristics after being hybridized with complimentary ssDNA, the concentrations of which are 0 to 40 nM, and the drain–source voltage is controlled at (a) 0.2 V, (b) 0.6 V and (c) 1.0 V.

Fig. 6.  (Color online) The effects of hybridized cDNA on (a) the variation of GFET’s CNP and (b) the conductance.

Table 1.   The best values for the correlation coefficients A,B and C.

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    Received: 19 April 2015 Revised: Online: Published: 01 January 2016

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      Yunfang Jia, Cheng Ju. Sentaurus® based modeling and simulation for GFET's characteristic for ssDNA immobilization and hybridization[J]. Journal of Semiconductors, 2016, 37(1): 014005. doi: 10.1088/1674-4926/37/1/014005 Y F Jia, C Ju. Sentaurus® based modeling and simulation for GFET\'s characteristic for ssDNA immobilization and hybridization[J]. J. Semicond., 2016, 37(1): 014005. doi: 10.1088/1674-4926/37/1/014005.Export: BibTex EndNote
      Citation:
      Yunfang Jia, Cheng Ju. Sentaurus® based modeling and simulation for GFET's characteristic for ssDNA immobilization and hybridization[J]. Journal of Semiconductors, 2016, 37(1): 014005. doi: 10.1088/1674-4926/37/1/014005

      Y F Jia, C Ju. Sentaurus® based modeling and simulation for GFET\'s characteristic for ssDNA immobilization and hybridization[J]. J. Semicond., 2016, 37(1): 014005. doi: 10.1088/1674-4926/37/1/014005.
      Export: BibTex EndNote

      Sentaurus® based modeling and simulation for GFET's characteristic for ssDNA immobilization and hybridization

      doi: 10.1088/1674-4926/37/1/014005
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      Project supported by the National Natural Science Foundation of China (No. 61371028) and the Tianjin Natural Science Foundation (No. 12JCZDJC22400).

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