SEMICONDUCTOR PHYSICS

Magneto-polaron induced intersubband optical transition in a wide band gap II—VI semiconductor quantum dot

P. Christina Lily Jasmine1 and A. John Peter2

+ Author Affiliations

 Corresponding author: A. John Peter, E-mail: a.john.peter@gmail.com

PDF

Abstract: Effects of LO-phonon contribution on the electronic and the optical properties are investigated in a Cd0.8Zn0.2Se/ZnSe quantum dot in the presence of magnetic field strength. The magneto-polaron induced hydrogenic binding energy as a function of dot radius in the wide band gap quantum dot is calculated. The oscillator strength and the spontaneous lifetime are studied taking into account the spatial confinement, magnetic field strength and the phonon contribution. Numerical calculations are carried out using variational formulism within the single band effective mass approximation. The optical properties are computed with the compact density matrix method. The magneto-polaron induced optical gain as a function of photon energy is observed. The results show that the optical telecommunication wavelength in the fiber optic communications can be achieved using CdSe/ZnSe semiconductors and it can be tuned with the proper applications of external perturbations.

Key words: electronic statesoptical absorptionintersubband transitionquantum dot



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
Fig. 1.  Variation of hydrogenic donor binding energy as a function of dot radius in a Cd$_{0.8}$Zn$_{0.2}$Se/ZnSe quantum dot for various magnetic field strengths with and without the phonon effects.

Fig. 2.  Variation of polaron-induced oscillator strength as a function of dot radius in a Cd$_{0.8}$Zn$_{0.2}$Se/ZnSe quantum dot in the presence of magnetic field strengths.

Fig. 3.  Variation of spontaneous lifetime of 2p-1s like transition of a donor impurity as a function of dot radius in a Cd$_{0.8}$Zn$_{0.2}$Se/ZnSe quantum dot in the presence of magnetic field strength with and without the phonon contribution.

Fig. 4.  Variation of polaron-induced gain as a function of photon energy in the presence of magnetic field strength in a Cd$_{0.8}$Zn$_{0.2}$Se/ZnSe quantum dot.

Fig. 5.  Variation of absorption wavelengths of the absorption spectrum with the dot radius in the presence of magnetic field strength in a Cd$_{0.8}$Zn$_{0.2}$Se/ZnSe quantum dot with and without the phonon corrections.

DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV

Table 1.   Material parameters for Cd$_{0.8}$Zn$_{0.2}$Se and ZnSe.

DownLoad: CSV
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2510 Times PDF downloads: 41 Times Cited by: 0 Times

    History

    Received: 01 September 2014 Revised: Online: Published: 01 March 2015

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      P. Christina Lily Jasmine, A. John Peter. Magneto-polaron induced intersubband optical transition in a wide band gap II—VI semiconductor quantum dot[J]. Journal of Semiconductors, 2015, 36(3): 032001. doi: 10.1088/1674-4926/36/3/032001 P. Christina Lily Jasmine, A. John Peter. Magneto-polaron induced intersubband optical transition in a wide band gap II—VI semiconductor quantum dot[J]. J. Semicond., 2015, 36(3): 032001. doi: 10.1088/1674-4926/36/3/032001.Export: BibTex EndNote
      Citation:
      P. Christina Lily Jasmine, A. John Peter. Magneto-polaron induced intersubband optical transition in a wide band gap II—VI semiconductor quantum dot[J]. Journal of Semiconductors, 2015, 36(3): 032001. doi: 10.1088/1674-4926/36/3/032001

      P. Christina Lily Jasmine, A. John Peter. Magneto-polaron induced intersubband optical transition in a wide band gap II—VI semiconductor quantum dot[J]. J. Semicond., 2015, 36(3): 032001. doi: 10.1088/1674-4926/36/3/032001.
      Export: BibTex EndNote

      Magneto-polaron induced intersubband optical transition in a wide band gap II—VI semiconductor quantum dot

      doi: 10.1088/1674-4926/36/3/032001
      More Information
      • Corresponding author: E-mail: a.john.peter@gmail.com
      • Received Date: 2014-09-01
      • Accepted Date: 2014-10-22
      • Published Date: 2015-01-25

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return