Fig. 1.
Carrier distribution in the base region.
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Shangbin Ye, Jiajia Zhang, Yicheng Zhang, Yongtao Yao. Temperature-variable high-frequency dynamic modeling of PIN diode[J]. Journal of Semiconductors, 2016, 37(4): 044010. doi: 10.1088/1674-4926/37/4/044010
S B Ye, J J Zhang, Y C Zhang, Y T Yao. Temperature-variable high-frequency dynamic modeling of PIN diode[J]. J. Semicond., 2016, 37(4): 044010. doi: 10.1088/1674-4926/37/4/044010.
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Temperature-variable high-frequency dynamic modeling of PIN diode
doi: 10.1088/1674-4926/37/4/044010
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Abstract
The PIN diode model for high frequency dynamic transient characteristic simulation is important in conducted EMI analysis. The model should take junction temperature into consideration since equipment usually works at a wide range of temperature. In this paper, a temperature-variable high frequency dynamic model for the PIN diode is built, which is based on the Laplace-transform analytical model at constant temperature. The relationship between model parameters and temperature is expressed as temperature functions by analyzing the physical principle of these parameters. A fast recovery power diode MUR1560 is chosen as the test sample and its dynamic performance is tested under inductive load by a temperature chamber experiment, which is used for model parameter extraction and model verification. Results show that the model proposed in this paper is accurate for reverse recovery simulation with relatively small errors at the temperature range from 25 to 120℃. -
References
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