Output Power  of an AlGaN/GaN HFET on Sapphire Substrate

Zhang Zhiguo; Yang Ruixia; Li Li; Feng Zhen; Wang Yong; Yang Kewu

Output Power of an AlGaN/GaN HFET on Sapphire Substrate

+ Author Affiliations

Article Navigation > Journal of Semiconductors > 2006 > 27(7): 1255-1258

Zhang Zhiguo, Yang Ruixia, Li Li, Feng Zhen, Wang Yong, Yang Kewu. Output Power of an AlGaN/GaN HFET on Sapphire Substrate[J]. Journal of Semiconductors, 2006, In Press. Zhang Z G, Yang R X, Li L, Feng Z, Wang Y, Yang K W. Output Power of an AlGaN/GaN HFET on Sapphire Substrate[J]. Chin. J. Semicond., 2006, 27(7): 1255.Export: BibTex EndNote

Citation:

Zhang Zhiguo, Yang Ruixia, Li Li, Feng Zhen, Wang Yong, Yang Kewu. Output Power of an AlGaN/GaN HFET on Sapphire Substrate[J]. Journal of Semiconductors, 2006, In Press.

Zhang Z G, Yang R X, Li L, Feng Z, Wang Y, Yang K W. Output Power of an AlGaN/GaN HFET on Sapphire Substrate[J]. Chin. J. Semicond., 2006, 27(7): 1255.

Export: BibTex EndNote

Citation:

Zhang Zhiguo, Yang Ruixia, Li Li, Feng Zhen, Wang Yong, Yang Kewu. Output Power of an AlGaN/GaN HFET on Sapphire Substrate[J]. Journal of Semiconductors, 2006, In Press.

Zhang Z G, Yang R X, Li L, Feng Z, Wang Y, Yang K W. Output Power of an AlGaN/GaN HFET on Sapphire Substrate[J]. Chin. J. Semicond., 2006, 27(7): 1255.

Export: BibTex EndNote

PDF( 460 KB)

Output Power of an AlGaN/GaN HFET on Sapphire Substrate

School of Information Engineering,Hebei University of Technology,Tianjin 300130,China
No13 Research Institute,China Electronic Technology Group Corporation,Shijiazhuang 050051,China
School of Information Engineering,Hebei University of Technology,Tianjin 300130,China
School of Information Engineering,Hebei University of Technology,Tianjin 300130,China
No13 Research Institute,China Electronic Technology Group Corporation,Shijiazhuang 050051,China
No13 Research Institute,China Electronic Technology Group Corporation,Shijiazhuang 050051,China
School of Information Engineering,Hebei University of Technology,Tianjin 300130,China
No13 Research Institute,China Electronic Technology Group Corporation,Shijiazhuang 050051,China

Received Date: 2015-08-20

Abstract

Abstract

The low breakdown voltage of AlGaN/GaN HFETs,which is caused by the poor buffer layer of GaN epitaxial wafer,is improved through mesa isolation and implantation isolation.Annealing at 500℃ for 50s after the gate metal deposition yields the best performance for an Ni-AlGaN/GaN diode.In particular,the ideality factor and barrier height reach 1.5 and 0.87eV,respectively.Optimization is achieved by comparing the performance of the gate and output power of AlGaN/GaN HFETs fabricated under different conditions.The output power of a 1mm-gate-wide AlGaN/GaN HFET on sapphire substrate is 4.57W, with a power added efficiency of 55.1% at 8GHz.
- AlGaN/GaN,
- HFET,
- isolation,
- rectified performance,
- annealing,
- output power

FullText(HTML)

References(0)

References

Output Power of an AlGaN/GaN HFET on Sapphire Substrate

Search

Share:

Article Metrics

History

Catalog

Email This Article

Output Power of an AlGaN/GaN HFET on Sapphire Substrate

Abstract

References

Proportional views

Catalog

Output Power of an AlGaN/GaN HFET on Sapphire Substrate

Search

Share:

Article Metrics

History

Catalog

Email This Article

Output Power of an AlGaN/GaN HFET on Sapphire Substrate

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content