Chin. J. Semicond. > 2006, Volume 27 > Issue 10 > 1823-1827

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Ohmic Contact to an AlGaN/GaN Heterostructure

Yang Yan, Wang Wenbo and Hao Yue

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Abstract: The ohmic contacts of Ti/Al/Ni/Au on AlGaN/GaN heterostructures are investigated by adopting different Ti/Al structures and thermal annealing processes.The results show that good ohmic contact with a low specific contact resistance of 3.30E-6Ω·cm2 is obtained by evaporating a Ti(20nm)/Al(120nm)/Ni(55nm)/Au(45nm) multilayer and annealing for 30s at 850℃ in ultra-high purity N2 ambient.The ohmic contact has good thermal stability and surface morphology,making it very suitable for manufacturing high performance AlGaN/GaN HEMTs.

Key words: AlGaN/GaNHEMTsTi/Al/Ni/Auohmic contact

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    Received: 18 August 2015 Revised: 04 May 2006 Online: Published: 01 October 2006

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      Yang Yan, Wang Wenbo, Hao Yue. Ohmic Contact to an AlGaN/GaN Heterostructure[J]. Journal of Semiconductors, 2006, In Press. Yang Y, Wang W B, Hao Y. Ohmic Contact to an AlGaN/GaN Heterostructure[J]. Chin. J. Semicond., 2006, 27(10): 1823.Export: BibTex EndNote
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      Yang Yan, Wang Wenbo, Hao Yue. Ohmic Contact to an AlGaN/GaN Heterostructure[J]. Journal of Semiconductors, 2006, In Press.

      Yang Y, Wang W B, Hao Y. Ohmic Contact to an AlGaN/GaN Heterostructure[J]. Chin. J. Semicond., 2006, 27(10): 1823.
      Export: BibTex EndNote

      Ohmic Contact to an AlGaN/GaN Heterostructure

      • Received Date: 2015-08-18
      • Accepted Date: 2006-03-27
      • Revised Date: 2006-05-04
      • Published Date: 2006-10-12

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